According to one embodiment, a semiconductor device include a substrate, a first conductor on an upper surface of the substrate and a second conductor on the upper surface of the substrate. The first conductor is separated from the second conductor. A first transistor is on an upper surface of the first conductor. A first end of the first transistor is electrically connected to the first conductor. A second transistor is on an upper surface of the second conductor. A first end of the second transistor is electrically connected to the second conductor. A third conductor has a first portion that is a flat plate shape. The first portion is at a height above upper surfaces of the first and second transistors. The third conductor electrically connects a second end of the first transistor to the first end of the second transistor.

A semiconductor device includes a semiconductor part, first and second electrodes, and first and second protective films. The first electrode is provided on the semiconductor part. The first protective film is provided on the semiconductor part and covers an outer edge of the first electrode. The second electrode is provided on the first electrode. The second electrode includes an outer edge partially covering the first protective film. The second protective film is provided on the semiconductor part and covers the first protective film and the outer edge of the second electrode.

Provided is a semiconductor package modularized and manufactured by preparing a main block for putting on a semiconductor chip, an insulator, and one or more sub block, preparing the semiconductor chip, preparing an adhesive used in attaching the semiconductor chip, attaching the semiconductor chip to an upper surface or upper and lower surfaces of the main block, performing an electrical connection of the semiconductor chip, preparing a substrate comprising a pattern enabling an electrical connection and vertically attaching one side of the main block to the pattern of the substrate to enable an electrical connection. In the semiconductor package above, an accumulation rate increases on the substrate due to a vertically arranged structure of the semiconductor chips and a heat emission area is enlarged to improve a heat emission effect.

In one example, a semiconductor device includes a substrate that comprises a substrate conductor material. An electronic component has a first component terminal that comprises a first component terminal conductor material and a second component terminal that comprises a second component terminal conductor material. An interconnect comprises an interconnect conductor material, a component end, and a substrate end. The second component terminal is attached to the substrate with a first intermetallic bond, the component end of the interconnect is attached to the first component terminal with a second intermetallic bond, and the substrate end of the interconnect is attached to the substrate with a third intermetallic bond. Other examples and related methods are also disclosed herein.

A power module having electrical connection parts, preferably made of metal, each having a main plate, the main plates extending in one and the same main plane so as to be substantially coplanar. At least one of the electrical connection parts includes at least one electrical connector projecting from its main plate. At least one transistor is electrically connected between two upper faces of respectively two of the main plates, and an electrically insulating overmolding, for example made of resin, covers each transistor and at least one portion of the upper faces of the main plates.

A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.

A semiconductor module includes: an insulation layer; a semiconductor element that includes a main electrode and is mounted on the insulation layer; a wiring member that is electrically connected to the main electrode of the semiconductor element; a first resin that encases the semiconductor element and the wiring member; and a second resin that covers a part of the wiring member. A thermal decomposition temperature or a melting point of the second resin is greater than a maximum of guaranteed operating temperature of the semiconductor element and is less than a thermal decomposition temperature or a melting point of the first resin.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

In a wiring member, an element connection portion, a plate connection portion, and an upper surface portion are at height positions different from one another. The element connection portion has a through hole, and the plate connection portion has a through hole and a chamfer. The upper surface portion which is not connected to another portion, has projections asymmetrically disposed on both side surfaces thereof. Owing to these features, the type, the orientation, and the front and the back of the wiring member can be easily distinguished. Accordingly, it is possible to prevent incorrect assembling of the wiring member in a semiconductor module.

A semiconductor package includes a die pad having a die attach surface, a first laterally separated and vertically offset from the die pad, a semiconductor die mounted on the die attach surface and comprising a first terminal on an upper surface of the semiconductor die, an interconnect clip that is electrically connected to the first terminal and to the first lead, and a heat spreader mounted on top of the interconnect clip. The interconnect clip includes a first planar section that interfaces with the upper surface of the semiconductor die and extends past an outer edge side of the die pad. The heat spreader covers an area of the first planar section that is larger than an area of the semiconductor die. The heat spreader laterally extends past a first outer edge side of the die pad that faces the first lead.