A semiconductor die and an electrically conductive ribbon are arranged on a substrate. The electrically conductive ribbon includes a roughened surface. An insulating encapsulation is molded onto the semiconductor die and the electrically conductive ribbon. The roughened surface of the electrically conductive ribbon provides a roughened coupling interface to the insulating encapsulation.

A variety of footed and leadless semiconductor packages, with either exposed or isolated die pads, are described. Some of the packages have leads with highly coplanar feet that protrude from a plastic body, facilitating mounting the packages on printed circuit boards using wave-soldering techniques.

A semiconductor device includes a conductive member including first, second and third conductors mutually spaced, a first semiconductor element having a first obverse surface provided with a first drain electrode, a first source electrode and a first gate electrode, and a second semiconductor element having a second obverse surface provided with a second drain electrode, a second source electrode and a second gate electrode. The first conductor is electrically connected to the first source electrode and the second drain electrode. The second conductor is electrically connected to the second source electrode. As viewed in a first direction crossing the first obverse surface, the second conductor is adjacent to the first conductor in a second direction crossing the first direction. The third conductor is electrically connected to the first drain electrode and is adjacent to the first conductor and the second conductor as viewed in the first direction.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A semiconductor apparatus includes a first connection terminal and a second connection terminal, a drive circuit including one or more power semiconductor elements, a control circuit to control the one or more power semiconductor elements, a circuit substrate, a passive element on the circuit substrate, and a first bus bar and a second bus bar. The first bus bar includes a first body including a path electrically connecting the first connection terminal to the drive circuit, and a first protrusion protruding toward the circuit substrate against the first body. The second bus bar includes a second body including a path electrically connecting the second connection terminal and the drive circuit, and a second protrusion protruding toward the circuit substrate against the second body. The passive element is electrically connected to the first protrusion and to the second protrusion.

A semiconductor device includes metal connector plate having a first lower surface, facing an electrode of a semiconductor chip, a first end surface, a second end surface, and a second lower surface connecting the first end surface and the second end surface. In a first direction parallel to the semiconductor chip, an end surface of the electrode is located between the positions of the first end surface and the second end surface. A distance from the second lower surface to the electrode is greater than a distance from the first lower surface to the electrode. A joining component has a first portion between the first lower surface and the electrode and a second portion between the second lower surface and the electrode.

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

A preparation method of a thin power device comprising the steps of steps S1, S2 and S3. In step S1, a substrate is provided. The substrate comprises a first set of first contact pads and a second set of second contact pads arranged at a front surface and a back surface of the substrate respectively. Each first contact pad of the first set of contact pads is electrically connected with a respective second contact pad of the second set of contact pads via a respective interconnecting structure formed inside the substrate. A through opening is formed in the substrate aligning with a third contact pad attached to the back surface of the substrate. The third contact pad is not electrically connected with the first set of contact pads. In step S2, a semiconductor chip is embedded into the through opening. A back metal layer at a back surface of the semiconductor chip is attached to the third contact pad. In step S3, a respective electrode of a plurality of electrodes at a front surface of the semiconductor chip is electrically connected with said each first contact pad of the first set of contact pads via a respective conductive structure of a plurality of conductive structures.

A semiconductor device is provided, including a seal portion; an electronic element within the seal portion; first, second, and third lead terminals; first and second connecting elements; and first and second conductive bonding agents, one end of the first connecting element having a protrusion downward and electrically connected to a control electrode of the electronic element with the first conductive bonding agent, a first side surface extending from the one end to the other end of the first connecting element is parallel to an extending direction along which the one end of the second connecting element extends, a wall portion being disposed on a top surface of the one end of the second lead terminal, and the wall portion being in contact with the other end of the first connecting element.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.