First, second, and third integrated devices each include one or more interconnecting structure. Each interconnecting structure includes (i) one or more interconnecting nodules extending from an edge surface of the device, (ii) one or more interconnect voids formed in an edge surface of the device, or (iii) both (i) and (ii). The one or more interconnecting structures on each of the first and second device is mated with the one or more interconnecting structures on the second device. The first integrated device includes a signal output, the third integrated device includes a signal input; and the second integrated device includes a conductor for conducting a signal from the signal output to the signal input.

In one embodiment, methods for making semiconductor devices are disclosed.

A quilt packaging system includes a first and second electronic device each comprising a plurality of edge surfaces at least a first edge surface of which comprises one or more interconnect modules disposed thereon. The first edge surface of the second electronic device is positioned contiguous to the first edge surface of the first electronic device, and at least one of the one or more interconnect nodules disposed on the first edge surface of the first electronic device is configured to be in physical contact with at least one of the one or more interconnect nodules disposed on the first edge surface of second electronic device so as to provide an electrical connection between the first and second electronic devices at the first edge surfaces of the first and second electronic device.

In one embodiment, methods for making semiconductor devices are disclosed.

The present application discloses a chip socket, a testing fixture and a chip testing method thereof. The chip socket includes a pedestal, a plurality of conductive traces, a plurality of clamp structures, and a plurality of electrical contacts. The plurality of conductive traces are formed in the pedestal. The plurality of clamp structures are conductive and disposed on the first surface of the pedestal, and at least one of the plurality of clamp structures is coupled to a corresponding conductive trace and configured to clamp a solder ball of a chip to be tested. The plurality of electrical contacts are disposed on the second surface of the pedestal, and at least one of the plurality of electrical contacts is coupled to a corresponding clamp structure through a corresponding conductive trace.

Some implementations herein provide a semiconductor package and methods of formation. The semiconductor package includes a semiconductor die having a first set of conductive structures connected with a substrate having a second set of conductive structures, where a profile of heights of the second set of conductive structures includes a curvature relative to a surface of the substrate. The curvature is configured to compensate for warpage (e.g., offset warpage) that may be induced to the semiconductor die and/or the substrate during a reflow process that joins the semiconductor die and the substrate. By compensating for the warpage, a planarity of an interface region including solder joints between the first and second sets of conductive structures is increased. Increasing the planarity may reduce solder joint defects in the semiconductor package relative to another semiconductor package including another substrate having conductive structures without the profile having the curvature.