A semiconductor device includes a semiconductor chip with an electrode, an insulated circuit board including an insulating board and a circuit pattern formed thereon. The circuit pattern has the semiconductor chip on a front surface thereof. The semiconductor device further includes a plurality of conductive posts, each having a lower end bonded to at least one of the front surface of the circuit pattern or the electrode of the semiconductor chip, and each extending vertically upward with respect to a front surface of the insulated circuit board, a printed circuit board bonded to an upper end side of each conductive post, a spacer disposed between the printed circuit board and the insulated circuit board such that a front surface of the printed circuit board faces the insulated circuit board, and a pressing member disposed above the spacer having the printed circuit board therebetween.

In one aspect the present disclosure relates to a 3D printed signal control backbone apparatus. The apparatus may have a filament including a first material section and a plurality of second material sections. The first material section is bounded on opposing ends by the second material sections. The first material section is formed by an ink having a percolating network of a plurality of chiplets infused in a non-conductive polymer. The plurality of chiplets form electrically responsive elements imparting a predetermined logic function and which are responsive to a predetermined electrical signal. The second material sections are formed by an ink which is electrically conductive.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A semiconductor device includes lower gate electrodes placed on a substrate and spaced apart from one another; upper gate electrodes placed over the lower gate electrodes and spaced apart from one another; an R-type pad extending from one end of at least one electrode among the lower gate electrodes or the upper gate electrodes and having a greater thickness than the lower gate electrode or upper gate electrode connected to the R-type pad; and a P-type pad extending from one end of at least one electrode to which the R-type pad is not connected among the lower gate electrodes or the upper gate electrodes and having a different thickness than the R-type pad, wherein the P-type pad includes a first pad connected to an uppermost lower gate electrode among the lower gate electrodes.

A packaged semiconductor device including an integrated passive device-containing package component disposed between a power module and an integrated circuit-containing package and a method of forming the same are disclosed. In an embodiment, a device includes a first package component including a first integrated circuit die; a first encapsulant at least partially surrounding the first integrated circuit die; and a redistribution structure on the first encapsulant and coupled to the first integrated circuit die; a second package component bonded to the first package component, the second package component including an integrated passive device; and a second encapsulant at least partially surrounding the integrated passive device; and a power module attached to the first package component through the second package component.

A display apparatus including a display panel including a base substrate and a first pad electrode on a first pad portion of the base substrate, a flexible substrate connected to the first pad portion, and a driving chip electrically connected to the flexible substrate. The flexible substrate includes a first film layer, a first wiring layer on the first film layer and comprising a plurality of wirings, a second film layer on the first wiring layer, and a second wiring layer on the second film layer and comprising a plurality of wirings. The wirings of the second wiring layer include a first_first wiring and a first_second wiring, the first_first wiring and the first_second wiring extend in a same direction along a same line and are spaced from each other by a gap therebetween. The gap is at an edge of the base substrate in a plan view.

A 3D printable feedstock ink is disclosed for use in a 3D printing process where the ink is flowed through a printing nozzle. The ink may be made up of a non-conductive flowable material and a plurality of chiplets contained in the non-conductive flowable material in random orientations. The chiplets may form a plurality of percolating chiplet networks within the non-conductive flowable material as ones of the chiplets contact one another. Each one of the chiplets has a predetermined circuit characteristic which is responsive to a predetermined electrical signal, and which becomes electrically conductive when the predetermined electrical signal is applied to the ink, to thus form at least one conductive signal path through the ink.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A semiconductor module includes a semiconductor element having one and the other surface, a lead terminal connected electrically and thermally to the semiconductor element, a first solder which bonds the lead terminal and the one surface of the semiconductor element together, a circuit layer over which the semiconductor element is disposed and a second solder which bonds the other surface of the semiconductor element and the circuit layer together. The inequality
(A/B)<1 holds, where A and B are the tensile strength of the first and second solder, respectively. As a result, even if the lead terminal which thermally expands because of heat generated by the semiconductor element expands or contracts toward the semiconductor element, a stress applied by the lead terminal is absorbed and relaxed by the first solder. This prevents damage to the surface electrode of the semiconductor element by suppressing the occurrence of cracks.

A method for producing an electric circuit in which a contact carrier comprising a first contact area and a second contact area is provided. An insulating body is applied to the circuit carrier and at least partially covers the first contact area and the second contact area. The insulating body comprises cut-outs in regions both contact areas. A flowable electrical conducting medium is introduced into the insulating body.