A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.

A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.

An apparatus for enhancing the thermal performance of semiconductor packages effectively. The concept of this invention is to provide silicon nanowires on the backside of an integrated circuit die to directly attach the die to the substrate, thereby improving the interface between die and substrate, and thus enhancing thermal performance and enhancing reliability by improving adhesion.

A power semiconductor device and package includes multiple electrically parallel semiconductor device legs designed to share source regions and share a drain region between two devices in each leg laterally staggered from each other to distribute thermal conductivity across the shared source regions. A multitude of jigsaw patterned lateral isolation trenches are formed in a substrate of the device. The trenches are configured to isolate the laterally staggered line-in and line-out source regions from a common drain region of the plurality of semiconductor device legs. The staggered devices are also designed for staggered time and staggered heat conductivity delays from the package input to an output of a respective pair of devices to be shorter than a time and heat conductivity delay from the package input to an output of a subsequent pair of devices.

A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.

Disclosed are various embodiments that involve mechanically flexible interconnects, methods of making mechanically flexible interconnects, methods of using mechanically flexible interconnects, and the like.

A power semiconductor device and package includes multiple electrically parallel semiconductor device legs designed to share source regions and share a drain region between two devices in each leg laterally staggered from each other to distribute thermal conductivity across the shared source regions. A multitude of jigsaw patterned lateral isolation trenches are formed in a substrate of the device. The trenches are configured to isolate the laterally staggered line-in and line-out source regions from a common drain region of the plurality of semiconductor device legs. The staggered devices are also designed for staggered time and staggered heat conductivity delays from the package input to an output of a respective pair of devices to be shorter than a time and heat conductivity delay from the package input to an output of a subsequent pair of devices.

First and second integrated devices each have an optical component and a plurality of interconnect structures disposed one edge thereon. The first edge surface of the second integrated device is positioned contiguous to the first edge surface of the first integrated device. The interconnect structures disposed on the first integrated device are in physical contact with the interconnect structures disposed on the edge surface of the second integrated device so as to provide alignment for conveying at least one signal between the optical components on the first and second integrated devices.

There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

A method for producing a sinter layer connection between a substrate and a chip resulting in an electric and thermal connection therebetween and in reduced mechanical tensions within the chip. The method produces a sinter layer by applying a multitude of sinter elements of a base material forming the sinter layer in structured manner on a contact area of a main surface of a substrate; placing a chip to be joined to the substrate on the sinter elements; and heating and compressing the sinter elements to produce a structured sinter layer connecting the substrate and chip and extending within the contact area, the surface coverage density of the sinter elements on the substrate in a center region of the contact area being greater than the surface coverage density of the sinter elements in an edge region of the contact area, and at least one through channel, extending laterally as to the substrate's main surface being provided towards the contact area's edge. A large-area sinter element is situated in the contact area's center region, and circular sinter elements is situated in a contact area edge region. The sinter elements may also have notches. Also described is a related device.