Systems and methods of conductively coupling at least three semiconductor dies included in a semiconductor package using a multi-die interconnect bridge that is embedded, disposed, or otherwise integrated into the semiconductor package substrate are provided. The multi-die interconnect bridge is a passive device that includes passive electronic components such as conductors, resistors, capacitors and inductors. The multi-die interconnect bridge communicably couples each of the semiconductor dies included in the at least three semiconductor dies to each of at least some of the remaining at least three semiconductor dies. The multi-die interconnect bridge occupies a first area on the surface of the semiconductor package substrate. The smallest of the at least three semiconductor dies coupled to the multi-die interconnect bridge 120 occupies a second area on the surface of the semiconductor package substrate, where the second area is greater than the first area.

Stacked semiconductor die architectures having one or more base dies and techniques of forming such architectures are described. The stacked semiconductor die architectures may be included in or used to form semiconductor packages. A stacked semiconductor die architecture can include: (i) one or more base dies (e.g., at least one disaggregated base die, at least one monolithic base die, etc.); and (ii) a carrier wafer having multiple stacked semiconductor dies embedded in the carrier wafer, where the carrier wafer is on the one or more base dies and where one or more interconnect structures (e.g., wires, bumps, microbumps, pillars, etc.) couple the one or more base dies to the carrier wafer and/or the stacked semiconductor dies.

Systems and methods for multi-height interconnect structures for a semiconductor device are provided herein. The multi-height interconnect structure generally includes a primary level semiconductor die having a primary conductive pillar and a secondary conductive pillar, where the primary conductive pillar has a greater height than the secondary conductive pillar. The semiconductor device may further include a substrate electrically coupled to the primary level semiconductor die through the primary conductive pillar and a secondary level semiconductor die electrically coupled to the primary level semiconductor die through the secondary conductive pillar. The multi-height pillars may be formed using a single photoresist mask or multiple photoresist masks. In some configurations, the primary and secondary conductive pillars may be arranged on only the front-side of the dies and/or substrate.

A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.

A semiconductor package includes a package substrate, a processor chip mounted on the package substrate, a first stack structure on the package substrate, the first stack structure including a number M of memory chips stacked on the processor chip, and a second stack structure on the package substrate and spaced apart from the processor chip, the second stack structure including a number N of memory chips stacked on the package substrate. A number Q of channels that electrically connect the memory chips of the second stack structure with the processor chip may be greater than a number P of channels that electrically connect the memory chips of the first stack structure with the processor chip, or the number N of memory chips included in the second stack structure may be greater than the number M of memory chips included in the first stack structure.

A semiconductor package includes a first semiconductor chip mounted on the package substrate, a second semiconductor mounted on the package substrate and set apart from the first semiconductor chip in a horizontal direction thereby forming a gap between the first semiconductor chip and the second semiconductor chip. The semiconductor package further includes a first thermal interface material layer formed in the gap and having a first modulus of elasticity and a second thermal interface material layer formed on each of the first semiconductor chip and the second semiconductor chip and having a second modulus of elasticity, wherein the first modulus of elasticity is less than the second modulus of elasticity.

A semiconductor package device includes a substrate, an electronic component, and a thermal conductive layer. The electronic component is disposed on the substrate and includes a first surface facing away from the substrate. The thermal conductive layer is disposed above the first surface of the electronic component. The thermal conductive layer includes a plurality of portions spaced apart from each other.

Embodiments of present invention provide a semiconductor device. The semiconductor device includes a silicon (Si) substrate containing a set of short channel field-effect-transistors (FETs); a germanium (Ge) layer on top of the Si substrate containing a set of long channel p-type FETs (PFETs); and an oxide semiconductor layer on top of the Ge layer containing a set of long channel n-type FETs (NFETs), wherein the set of short channel FETs, long channel PFETs, and long channel NFETs are interconnected through a set of far-back-end-of-line (FBEOL) layers.

This invention provides a high-yielding and high-density/ultra-fine pitch package for ultra-large-scale ICs and advanced ICs. The package includes a substrate and a semiconductor chip. The substrate has a passivation layer covering a first surface of the substrate, wherein a plurality of holes are formed in the passivation layer, and a plurality of solder balls respectively accommodated in the plurality of holes. The semiconductor chip has a first plurality of pads, wherein a plurality of copper pillar micro-bumps respectively extend from the first plurality of pads, and the plurality of copper pillar micro-bumps are respectively connected to the plurality of solder balls.

Integrated circuit (IC) structures include transistor devices with interconnect structures, e.g., a source contact, drain contact, and/or gate contact. The interconnect structures have rounded top surfaces. Contouring the top surfaces of transistor contacts may decrease the likelihood of electrical shorting and may permit a larger volume of insulating dielectric between adjacent contacts.