A method includes forming an interconnect component including a plurality of dielectric layers that include an organic dielectric material, and a plurality of redistribution lines extending into the plurality of dielectric layers. The method further includes bonding a first package component and a second package component to the interconnect component, encapsulating the first package component and the second package component in an encapsulant, and precutting the interconnect component using a blade to form a trench. The trench penetrates through the interconnect component, and partially extends into the encapsulant. The method further includes performing a singulation process to separate the first package component and the second package component into a first package and a second package, respectively.

The present disclosure relates an integrated chip structure. The integrated chip structure includes a first chiplet predominantly having a first plurality of integrated chip devices coupled to a first plurality of interconnects over a first substrate. The first plurality of integrated chip devices are a first type of integrated chip device. The integrated chip structure further includes a second chiplet predominantly having a second plurality of integrated chip devices coupled to a second plurality of interconnects over a second substrate. The second plurality of integrated chip devices are a second type of integrated chip device different than the first type of integrated chip device. One or more inter-chiplet connectors are between the first and second chiplets and are configured to electrically couple the first and second chiplets. The first plurality of interconnects have a first minimum width different than a second minimum width of the second plurality of interconnects.

One or more die stacks are disposed on a redistribution layer (RDL) to make an electronic package. The die stacks include a die and one or more Through Silicon Via (TSV) dies. Other components and/or layers, e.g. interposes layers, can be included in the structure. An epoxy layer disposed on the RDL top surface and surrounds and attached to all the TSV die sides and all the die sides. Testing circuitry is located in various locations in some embodiments. Locations including in the handler, die, TSV dies, interposes, etc. Testing methods are disclosed, Methods of making including “die first” and “die last” methods are also disclosed. Methods of making heterogenous integrated structure and the resulting structures are also disclosed, particularly for large scale, e.g. wafer and panel size, applications.

A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.

A semiconductor package includes a first semiconductor chip on a substrate, a buried solder ball on the substrate and spaced apart from the first semiconductor chip, a first molding layer on the substrate and encapsulating and exposing the first semiconductor chip and the buried solder ball, a second semiconductor chip on the first molding layer and vertically overlapping the buried solder ball and a portion of the first semiconductor chip, and a second molding layer on the first molding layer and covering the second semiconductor chip. The second semiconductor chip is supported on the first semiconductor chip through a dummy solder ball between the first and second semiconductor chips. The second semiconductor chip is connected to the buried solder ball through a signal solder ball between the buried solder ball and the second semiconductor chip.

A semiconductor package according to the disclosure includes a terminal, a conductive pattern connected to the terminal, a barrier layer covering a top surface and a first side wall of the conductive pattern, an insulating layer surrounding the barrier layer, a protection layer covering a bottom surface of the insulating layer and a bottom surface of the barrier layer, a redistribution pattern connected to the barrier layer, a semiconductor chip electrically connected to the redistribution pattern, and a molding layer surrounding the semiconductor chip. A top surface of the protection layer includes a first portion contacting the conductive pattern, and a second portion contacting the barrier layer.

A semiconductor structure is provided, and includes a substrate and a plurality of devices disposed over the substrate. The semiconductor structure includes an interconnect structure disposed over the substrate and electronically connected to the devices. The semiconductor structure also includes a bonding film formed over the interconnect structure. The semiconductor structure further includes a protective layer formed on sidewalls of the substrate, the interconnect structure and the bonding film. In addition, the semiconductor structure includes a dielectric material formed on a sidewall of the protective layer and overlapping with the protective layer in a top view.

Disclosed is a semiconductor package comprising a first chip stack including on a substrate a plurality of first semiconductor chips in an offset stack structure and stacked to expose a connection region at a top surface of each of the first semiconductor chips, a second semiconductor chip on the substrate and horizontally spaced apart from the first chip stack, a spacer on the second semiconductor chip, and a second chip stack including third semiconductor chips in an offset stack structure on the first chip stack and the spacer. Each of the first semiconductor chips includes a first chip pad on the connection region and a first wire that extends between the first chip pad and the substrate. The first wire of an uppermost one of the first semiconductor chips is horizontally spaced apart from a lowermost one of the third semiconductor chips.

A semiconductor package includes; a package substrate including an upper surface with a bonding pad, a lower semiconductor chip disposed on the upper surface of the package substrate, wherein an upper surface of the lower semiconductor chip includes a connect edge region including a connection pad and an open edge region including a dam structure including dummy bumps, a bonding wire having a first height above the upper surface of the lower semiconductor chip and connecting the bonding pad and the connection pad, an upper semiconductor chip disposed on the upper surface of the lower semiconductor chip using an inter-chip bonding layer, and a molding portion on the package substrate and substantially surrounding the lower semiconductor chip and the upper semiconductor chip.

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.