Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.

A semiconductor device includes a first passivation layer over a circuit and. conductive pad over the first passivation layer, wherein the conductive pad is electrically connected to the circuit. A second passivation layer is disposed over the conductive pad and the first passivation layer, and has a first opening and a second opening. The first opening exposes an upper surface of a layer that extends underneath the conductive pad, and the second opening exposes the conductive pad. A first insulating layer is disposed over the second passivation layer and filling the first and second openings. A through substrate via extends through the insulating layer, second passivation layer, passivation layer, and substrate. A side of the through substrate via and the second passivation layer have a gap that is filled with the first insulating layer. A conductive via extends through the first insulating layer and connecting to the conductive pad.

A chip-to-chip interface of a multi-chip module (MCM), including: bidirectional data links for transmitting data signals and a direction indicator bit, wherein the direction indicator bit switches a direction of the bidirectional data links in real-time; a clock link for transmitting a clock signal common to the bidirectional data links, wherein the data and clock links are comprised of conductive traces between the chips and laid out to be of substantially equal length; and a clock driver means having a digitally programmable clock signal delay.

A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

Provided is a semiconductor package and a method of manufacturing the same, wherein in the semiconductor package, an area on a surface of a heat release metal layer pressed by a molding die is expanded and the molding die directly and uniformly compresses an upper substrate and/or a lower substrate, each of which does not include heat release posts so that contamination of a substrate occurring due to a molding resin may be prevented and molding may be stably performed.

A circuit structure is provided. The circuit structure may include a first die area including an output gate, a second die area including a circuit and an input gate and a die-to-die interconnect. The input gate may include a transistor. The circuit may be connected between the die-to-die interconnect and a gate region of the transistor. The circuit may include a MOS transistor. A first source/drain region of the MOS transistor may be connected to the die-to-die interconnect.

A semiconductor device includes a cooling base board and an insulated circuit substrate. On a front surface of an insulated board on the insulated circuit substrate, a high potential circuit pattern on which a semiconductor chip is mounted, an intermediate potential circuit pattern on which a semiconductor chip is mounted, a low potential circuit pattern, and a control circuit pattern are disposed so as to straddle a center line of the cooling base board. The intermediate potential circuit pattern includes a second chip mounting region, an output wiring connection region and an interconnect wiring region that form a U-shaped portion in which the high potential circuit pattern having a semiconductor chip thereon is disposed. The control circuit pattern is disposed so as to straddle the center line and faces the opening of the U-shaped portion.

Disclosed are semiconductor devices and semiconductor packages. The semiconductor device comprises a semiconductor substrate that includes a stack region and a pad region, a peripheral circuit structure that includes a plurality of peripheral circuits on the semiconductor substrate, a cell array structure on the peripheral circuit structure, and a redistribution layer on the cell array structure and including a redistribution dielectric layer and a redistribution pattern on the redistribution dielectric layer. The redistribution dielectric layer covers an uppermost conductive pattern of the cell array structure. The redistribution pattern is connected to the uppermost conductive pattern. A thickness in a vertical direction of the redistribution layer on the pad region is greater than that of the redistribution layer on the stack region.

An interposer comprises a semiconductor material and includes cache memory under a location on the interposer for a host device. Memory interface circuitry may also be located under one or more locations on the interposer for memory devices. Microelectronic device assemblies incorporating such an interposer and comprising a host device and multiple memory devices are also disclosed, as are methods of fabricating such microelectronic device assemblies.

A battery pack and charger platform including a voltage coupling circuit comprising an input that receives an input voltage and an output that sends an output voltage, a voltage monitoring circuit having an input coupled to the voltage coupling circuit output and an output, and a power source having an input coupled to the voltage monitoring circuit output, the power source input receives an input voltage representative of a charge instruction.