An apparatus comprises a first die, a thermal cooler formed over at least a portion of the first die, a second die formed over at least a portion of the thermal cooler, and a plurality of through-silicon vias providing electrical connections between the first die and the second die. The thermal cooler comprises a plurality of fluid channels for fluid cooling of the first die and the second die, the plurality of fluid channels being formed horizontally through the thermal cooler. The plurality of through-silicon vias are formed vertically through the first die, the thermal cooler and the second die.

An apparatus comprises a first die, a thermal cooler formed over at least a portion of the first die, a second die formed over at least a portion of the thermal cooler, and a plurality of through-silicon vias providing electrical connections between the first die and the second die. The thermal cooler comprises a plurality of fluid channels for fluid cooling of the first die and the second die, the plurality of fluid channels being formed horizontally through the thermal cooler. The plurality of through-silicon vias are formed vertically through the first die, the thermal cooler and the second die.

In a semiconductor device, an insulated substrate is bonded with a cooling body with lowered thermal resistance without a holding unit. The semiconductor device includes an insulated substrate where a wiring pattern copper plate unit for forming a plurality of wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit disposed on the other side of the insulating plate unit; a semiconductor chip mounted on the wiring pattern copper plate unit; a cooling body contacted with the heat radiation copper plate unit; and a wiring conductor plate connected between the semiconductor chip and the wiring pattern copper plate unit. The heat radiation copper plate unit and the cooling body are bonded with a metal sintered material, and thicknesses of the wiring pattern copper plate unit and the heat radiation copper plate unit are set to such thermal stress is relaxed.

A light-emitting diode (LED) projector includes an LED display panel and a projection lens arranged in front of LED display panel and configured to collect and project light emitted by the LED display panel. The LED display panel includes an LED panel and a micro lens array arranged over the LED panel. The LED panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, and an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits. The micro lens array includes a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies.