H01L25/074

Semiconductor package with embedded die and its methods of fabrication

Embodiments of the present invention describe a semiconductor package having an embedded die. The semiconductor package comprises a coreless substrate that contains the embedded die. The semiconductor package provides die stacking or package stacking capabilities. Furthermore, embodiments of the present invention describe a method of fabricating the semiconductor package that minimizes assembly costs.

Semiconductor Device Having Compliant and Crack-Arresting Interconnect Structure
20170250126 · 2017-08-31 ·

A power converter (300) has a first transistor chip (310) conductively stacked on top of a second transistor chip (320) attached to a substrate (301). A first metallic clip (360) has a plate portion (360a) and a ridge portion (360c) bent at an angle from the plate portion. The plate portion is attached to the terminal of the first transistor chip opposite the second transistor chip. The ridge portion extends to the substrate is and is configured as a plurality of parallel straight fingers (360d). Each finger is discretely attached to the substrate using attachment material (361), for instance solder, and operable as a spring-line cantilever to accommodate, under a force lying in the plane of the substrate, elastic elongation based upon inherent material characteristics.

ELECTRICAL MODULE CONTAINING AN ELECTRICAL COMPONENT AND A CONVERTER CONTAINING THE ELECTRICAL MODULE
20170245384 · 2017-08-24 ·

An electrical module contains at least one electrical component which is accommodated in a module housing. The module housing has at least two housing parts which lie one on the other and, on their own or together with one or more further housing parts of the module housing, delimit the interior of the module housing. There is at least one adhesive layer between the two housing parts, the adhesive layer adhesively bonding the two housing parts to one another.

Semiconductor power modules and devices
09741702 · 2017-08-22 · ·

An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.

NON-SILICON N-TYPE AND P-TYPE STACKED TRANSISTORS FOR INTEGRATED CIRCUIT DEVICES

Multiple non-silicon semiconductor material layers may be stacked within a fin structure. The multiple non-silicon semiconductor material layers may include one or more layers that are suitable for P-type transistors. The multiple non-silicon semiconductor material layers may further include one or more one or more layers that are suited for N-type transistors. The multiple non-silicon semiconductor material layers may further include one or more intervening layers separating the N-type from the P-type layers. The intervening layers may be at least partially sacrificial, for example to allow one or more of a gate, source, or drain to wrap completely around a channel region of one or more of the N-type and P-type transistors.

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
20220310597 · 2022-09-29 ·

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a first transistor, located on the substrate; a second transistor, located above the first transistor; and a gate structure, the gate structure including a first gate layer and a second gate layer, which connected to each other, the first gate layer surrounding the first transistor and the second gate layer surrounding the second transistor; an extension direction of the first transistor and an extension direction of the second transistor are both perpendicular to the substrate.

Semiconductor device and method of manufacturing semiconductor device, power conversion device, and moving body

An object is to provide a technique capable of fixing a cover to a container body without using a dedicated fixation mechanism and fixation member. A semiconductor device includes: a container body having a space with an opening; a semiconductor element disposed in the space in the container body; a sealing member disposed in the space in the container body to cover the semiconductor element; and a cover covering the opening of the container body, wherein a convex portion protruding into the space is provided on the cover, and the cover is fixed to the container body only by embedding at least a tip portion of the convex portion in the sealing member which has been cured.

Semiconductor modules and methods of forming the same
09818686 · 2017-11-14 · ·

Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench.

Power semiconductor module for improved heat dissipation and power density, and method for manufacturing the same
11251116 · 2022-02-15 · ·

The present disclosure relates to a semiconductor module, especially a power semiconductor module, in which the heat dissipation is improved and the power density is increased. The semiconductor module may include at least two electrically insulating substrates, each having a first main surface and a second main surface opposite to the first main surface. On the first main surface of each of the substrates, at least one semiconductor device is mounted. An external terminal is connected to the first main surface of at least one of the substrates. The substrates are arranged opposite to each other so that their first main surfaces are facing each other.

Cooler

A cooler includes a cooling pipe having a cooling surface in contact with a heat-exchanged component, and a refrigerant passage. A pair of outer passages are formed between a pair of opposed inner wall surfaces which are located at both ends of an inner wall surface of the cooling pipe in a perpendicular direction and which constitute the refrigerant passage, and a pair of partition walls that are located at both ends of an inner fin in the perpendicular direction. At least one flow-regulating rib is formed in the refrigerant passage to project into the refrigerant passage at a position inward of the pair of outer passages in the perpendicular direction and at a position outward of an inflow hole and a discharge hole in the perpendicular direction as well as at a position outward of the inner fin in an arrangement direction and at a position inward of the inflow hole and the discharge hole in the arrangement direction. The flow-regulating rib is configured to restrict flow rates of refrigerant through the pair of outer passages.