An electronic module includes a first sub-module and a second sub-module. The first sub-module includes a first substrate, a first electronic component disposed on the first substrate and a first electrode. The second sub-module includes a second substrate, a second electronic component disposed on the second substrate and a second electrode spaced from the first electrode. The second electrode faces the first electrode to form a capacitor for transmitting an alternating current (AC) signal between the first sub-module and the second sub-module.

A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.

A semiconductor device includes a first semiconductor module and a second semiconductor module. The first semiconductor module configures an upper arm, and includes first semiconductor elements connected in parallel to each other, a sealing resin body, and a positive electrode terminal. The second semiconductor module configures a lower arm, and includes second semiconductor elements connected in parallel to each other, a sealing resin body, and a negative electrode terminal. The first and second semiconductor modules are aligned in an alignment direction. At least one of the first and second semiconductor modules has a relay terminal for electrically relaying electrodes on a low potential side of the first semiconductor elements and electrodes on a high potential side of the second semiconductor elements.

A load controller includes a casing; a busbar module, the busbar module including a DC busbar and an AC busbar connected to a load; a capacitor connected to an external DC power supply, the capacitor being connected to the DC busbar; an IGBT power module, an input end of each IGBT being connected to the DC busbar, and an output end of each IGBT being connected to the AC busbar; a heat-dissipating module, the heat-dissipating module including multiple heat-dissipating fins, each IGBT in a same column of IGBTs being sandwiched between adjacent two heat-dissipating fins; a driving circuit board, the driving circuit board being electrically connected to each IGBT; and a control circuit board, the control circuit board being connected to the driving circuit board, where all of the busbar module, the IGBT power module, the heat-dissipating module, the driving circuit board and the control circuit board are disposed on the casing.

Power modules of a power module assembly each have a power card including a substrate, signal pins, and power terminals, and a casing over molded on the power card to define a passageway extending between opposite ends of the power module, and a continuous uninterrupted thermal path from the power card to the passageway. The modules are arranged end-to-end to define a continuous fluid pathway via the passageways.

A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.

An assembly includes at least one heat emitting device and a continuous conformal cooling structure adhering directly to and conforming with surfaces of at least a portion of the at least one heat emitting device. The cooling structure may include a thermally-conductive, electrically-insulative layer adhering directly to surfaces of the at least one heat generating device to provide an electrically nonconductive, continuous, conformal layer covering all such surfaces. An inner metallization layer may be adhered directly to surfaces of at least a portion of the insulative layer. An outer metallization layer may be adhered directly to surfaces of the inner metallization layer to provide a thermally conductive layer covering such surfaces.

A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.