An electronic device and associated methods are disclosed. In one example, the electronic device includes a first device and a second device coupled to a surface of a substrate, and a continuous flexible shield woven over the first device and under the second device to separate the first device from the second device. In selected examples, the continuous flexible shield may be formed from a laminate and one or more of the devices may be coupled through an opening or via in the continuous flexible shield.

Electronic power modules are disclosed. In one example, an electronic power module includes a first aluminum substrate, a second aluminum substrate, and a third aluminum substrate arranged in a common plane. The electronic power module includes first gap separating the first aluminum substrate from the second aluminum substrate. The electronic power module includes a second gap separating the second aluminum substrate from the third aluminum substrate. The electronic power module includes a first semiconductor switching component electrically coupled to the first aluminum substrate and the second aluminum substrate. The electronic power module includes a second semiconductor switching component electrically coupled to the second aluminum substrate and the third aluminum substrate.

A semiconductor module structure includes: a semiconductor element portion including a plurality of capacitor elements; two bus bars sandwiching the semiconductor element portion and being electrically connected to the semiconductor element portion; and cooling fins, which are conductive, formed on respective surfaces of the bus bars at positions sandwiching the semiconductor element portion. Further, insulating refrigerant is provided in the cooling fins.

A power module comprises a multi-layer base material; a first wiring line pattern provided on a surface on one side of the multi-layer base material; a second wiring line pattern provided on a surface on another side facing the surface of the one side of the multi-layer base material; a first switching element including a first terminal and a second terminal, the first switching element provided on the first wiring line pattern; and a first circuit element provided on any one of the first wiring line pattern and the second wiring line pattern, wherein a direction of a current path passing in a region between the first circuit element and the first switching element intersects with a direction of a current path passing under a region of the first switching element.

A power module (1) is disclosed, comprising: first and second substrates (10), each substrate patterned layer of electrically conductive material (12), a plurality of pre-packed power cells (20), positioned between the substrates, each cell comprising: an electrically insulating core (21) embedding at least one power die (22), and two external layers (23) of electrically conductive material on opposite sides of the electrically insulating core (21), said external layers being respectively connected to each patterned layers of the substrates,
wherein each external layer of a pre-packed power cell comprises a contact pad (230) connected to a respective contact (220) of the power die through connections arranged in the electrically insulating core (21), said contact pad having a surface area greater than the surface area of the power die electrical contact to which it is connected.

The present invention relates to a power module and a method for manufacturing same, the power module including: a lower ceramic substrate; an upper ceramic substrate which is disposed spaced apart from the upper portion of the lower ceramic substrate, and on the lower surface of which a semiconductor chip is mounted; spacers each having one end bonded to the lower ceramic substrate and the other end bonded to the upper ceramic substrate; first bonding layers each bonding the one end of each spacer to the lower ceramic substrate; and second bonding layers each bonding the other end of each spacer to the upper ceramic substrate. The present invention maintains a constant distance between the lower ceramic substrate and the upper ceramic substrate by having the spacers arranged therebetween, and thus is advantageous in that the semiconductor chip can be protected and heat dissipation efficiency can be increased.

In a general aspect, an electronic device assembly includes a substrate arranged in a plane. The substrate has a first side and a second side, the second side being opposite the first side. The assembly also includes a plurality of semiconductor die disposed on the first side of the substrate and at least one signal pin. The at least one signal pin includes a proximal end portion coupled with the first side of the substrate, a distal end portion, and a medial portion disposed between the proximal end portion and the distal end portion. The medial portion is pre-molded in a molding compound, the proximal end portion and the distal end portion exclude the molding compound. The at least one signal pin is arranged along a longitudinal axis that is orthogonal to the plane of the substrate.

A package structure is provided. The package structure includes a semiconductor chip and a protective layer laterally surrounding the semiconductor chip. The package structure also includes a polymer-containing element over the protective layer. The protective layer is wider than the polymer-containing element.

Electronic power modules are disclosed. In one example, an electronic power module includes a first aluminum substrate, a second aluminum substrate, and a third aluminum substrate arranged in a common plane. The electronic power module includes first gap separating the first aluminum substrate from the second aluminum substrate. The electronic power module includes a second gap separating the second aluminum substrate from the third aluminum substrate. The electronic power module includes a first semiconductor switching component electrically coupled to the first aluminum substrate and the second aluminum substrate. The electronic power module includes a second semiconductor switching component electrically coupled to the second aluminum substrate and the third aluminum substrate.

A semiconductor package system includes a substrate, a first and a second semiconductor package, a first thermal conductive layer, a first passive device, and a heat radiation structure. The first and second semiconductor package and first passive device may be mounted on a top surface of the substrate. The first semiconductor package may include a first semiconductor chip that includes a plurality of logic circuits. The first thermal conductive layer may be on the first semiconductor package. The heat radiation structure may be on the first thermal conductive layer, the second semiconductor package, and the first passive device. The heat radiation structure may include a first bottom surface physically contacting the first thermal conductive layer, and a second bottom surface at a higher level than that of the first bottom surface. The second bottom surface may be on the second semiconductor package and/or the first passive device.