A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 μm capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 μm interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

A power module and a carrier board are disclosed. The carrier board includes a circuit board body and a prefabricated substrate. The circuit board body includes a wiring layer. The prefabricated substrate is embedded in the circuit board body and includes an insulation layer and a metal layer, the metal layer is disposed on the insulation layer. The insulation layer is formed by a ceramic material. The metal layer is connected to the insulation layer through a sintering process. A surface of the insulation layer , which has contact with the at least one metal layer, has at least a part exposed outside of the at least one metal layer, the part of the insulation layer exposed to the outside of the at least one metal layer is an outer edge portion, and the outer edge portion is extended into the circuit board body along a horizontal direction.

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

The present invention relates to a cooling system where a semiconductor component including a semiconductor chip and a cooling apparatus are joined, wherein a coolant is supplied to a substrate, on which a semiconductor chip is installed, through an opening member of the cooling apparatus so that a surface of the substrate may be directly cooled by the coolant so as to improve cooling efficiency, and a cooling post structure, which enables the coolant to smoothly flow, is used to further improve cooling efficiency.

A power module has a plurality of packaged power semiconductors, a printed circuit board, a heat sink, and possibly a sealing compound. The power semiconductors have electrically conductive connection elements and heat removal areas on respective outer sides. The power semiconductors are arranged on a cooling surface of the heat sink and has its heat removal area connected to the cooling surface of the heat sink to conduct heat, and the printed circuit board is arranged on a side of the power semiconductors that is opposite the heat sink in an orthogonal direction, wherein the connection elements of the power semiconductors make electrical contact with pads on the printed circuit board regions, for example, laterally beside an edge of the heat sink, in which a projection of the heat sink onto the printed circuit board in the orthogonal direction does not cover the connection elements.

A power supply system includes a system board electrically connected to a load; a first package and a second package provided on an upper side of the system board; and a bridge member provided on upper sides of the first package and the second package, comprising a passive element and used for power coupling between the first package and the second package, wherein vertical projections of the first package and the second package on the system board are both overlapped with a vertical projection of the bridge member on the system board, the first package, and the second package are encapsulated with switching devices, terminals on upper surfaces of the first package and the second package are electrically connected to the bridge member, and terminals on lower surfaces thereof are electrically connected to the system board.

A semiconductor device has a U terminal with an internal joint portion at one end that is joined to a circuit board, an intermediate portion that is embedded in a case, and an external joint portion at another end that is exposed from the case, the U terminal being provided with a shock absorbing portion that is positioned between an inner surface of the case and the internal joint portion and absorbing stress that acts upon the internal joint portion. Due to the presence of the shock absorbing portion, even when the entire semiconductor device deforms or there is local deformation such that stress becomes concentrated at the joined surfaces of the internal joint portion and the circuit board, the stress is absorbed by the shock absorbing portion.

A power module having a packaging structure includes a substrate having a first conductive area, a second conductive area, a third conductive area, a first fixing area and a second fixing area. The first, the second and the third conductive areas are electrically connected to a first terminal, a second terminal and a third terminal, and the first and the second fixing areas are electrically connected to a first switch set and a second switch set, so that they are in a parallel arrangement. The first terminal is a current input end, the second terminal is an intermediate end, and the third terminal is a current output end. When a current flows from the current input end to the intermediate end, or from the intermediate end to the current output end, the current flows straightly in order to reduce a crossover area and lower the stray inductance.

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit includes copper blocks, an insulating substrate with a conductive pattern, an IGBT chip, a diode chip, a collector terminal pin, implant pins fixed to the chips by solder, a printed circuit board having the implant pins fixed thereto, an emitter terminal pin, a control terminal pin, a collector terminal pin, and a resin case having the above-mentioned components sealed therein. The copper blocks make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units can be combined with an inter-unit wiring board to form any circuit.

A current shaping phase leg bus bar for power electronics systems includes a first terminal connector, a second terminal connector, insulated from the first terminal connector, and a third terminal connector, insulated from the first and second terminal connectors. At least one of the terminal connectors is a current shaping terminal connector that includes one or more layers having a plurality of pre-defined locations for electrical connections, said plurality of pre-defined locations including one or more first locations and a plurality of second locations, and includes one or more gaps within or among its one or more layers, to provide substantially balanced conductive pathways among its one or more first locations and its plurality of second locations.