Detection substrate, detection panel and photoelectric detection device are provided. The detection substrate includes: a detection region and a non-detection region surrounding the detection region, wherein the detection region includes a plurality of detection units in an array and a plurality of bias voltage lines; each of the detection units includes: a driving circuit, and a photoelectric conversion circuit electrically connected with the driving circuit; wherein the bias voltage lines are electrically connected with the photoelectric conversion circuits; the non-detection region comprises: input terminals electrically connected with the bias voltage lines, and voltage compensation circuits electrically connected between the input terminals and the bias voltage lines; and the voltage compensation circuits are configured to offset a voltage generated by the photoelectric conversion circuits under ambient light in a manufacturing process of the detection substrate.

An image sensor includes a plurality of pixels and photo gate controller circuitry. Each pixel may transmit a pixel signal, corresponding to a photoelectric signal, in response to a photo gate signal in a frame. The photo gate controller circuitry may generate photo gate signals and transmit photo gate signals to the pixels. The photo gate controller circuitry includes a first delay circuit configured to transmit first delay clock signals each being delayed with respect to a reference clock signal by a certain amount of time and a second delay circuit configured to transmit second delay clock signals each being delayed with respect to the reference clock signal by a certain amount of time. The pixels are each configured to selectively receive signals, as the photo gate signals, among the delay clock signals output from the first delay circuit and the delay clock signals output from the second delay circuit.

A light sensor includes a photodiode, interlayer dielectric layer and plurality of metal layers. A polarizer is disposed in the plurality of metal layers. The photodiode is coupled to generate charge in response to incident light directed through a first side of the semiconductor layer. The polarizer includes a first metal grid formed with a first metal layer and a second metal grid formed with a third metal layer. The second metal grid is stacked with the first metal grid such that the first and second metal grids are disposed above and aligned with the photodiode. The photodiode is optically coupled to receive incident light through the first and second metal grids of the polarizer and through the first side of the semiconductor layer.

A photoelectric conversion device includes first to fourth pixel columns. Each of the first to fourth pixel columns includes a plurality of pixels arranged in a predetermined direction. Each of the plurality of pixels arranged in the first to fourth pixel columns includes a photoelectric conversion element configured to receive light of a wavelength region and generate a signal charge. Each of the plurality of pixels arranged in the first to fourth pixel columns further includes a circuit configured to convert the signal charge generated by the photoelectric conversion element into a voltage signal. Directions of reading the voltage signals from the first pixel column and the second pixel column are different from directions of reading the voltage signals from the third pixel column and the fourth pixel column.

Provided are an imaging device and an electronic apparatus capable of suppressing deterioration in performance due to charge accumulation. An imaging device includes: a photoelectric conversion layer having a first surface and a second surface located on an opposite side to the first surface; a first electrode located on a side of the first surface; and a second electrode located on a side of the second surface. In a thickness direction of the photoelectric conversion layer, when a region overlapping with the first electrode is defined as a first region, and a region deviating from the first electrode is defined as a second region, a first film thickness of the photoelectric conversion layer in at least a part of the first region is thinner than a second film thickness of the photoelectric conversion layer in the second region.

A light receiving device (3) includes a first circuit substrate (10) and a second circuit substrate (20). An avalanche photodiode (APD) (101) and a protection element (130) that protects the APD (101) are disposed on the first circuit substrate (10). The second circuit substrate (20) is stacked on the first circuit substrate (10), and a signal processing circuit that processes a signal output from the APD (101) is disposed on the second circuit substrate (20).

Transistors include a pyramid-shaped gate trench defined by a triangular shape or a trapezoidal shape in a channel width plane and a trapezoidal shape in a channel length plane. Side wall portions of the pyramid-shaped gate trench form a channel having a triangular shape or a trapezoidal shape in the channel width plane. Advantageously, such transistors increase transconductance without increasing pixel width. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

A detection device includes a plurality of detection elements arranged in a matrix having a row-column configuration in a detection region, a plurality of scan lines coupled to the detection elements arranged in a first direction, a plurality of output signal lines that are coupled to the detection elements arranged in a second direction different from the first direction, and to which the detection elements output detection signals, a detection circuit configured to be supplied with the detection signals through the output signal lines, and a control circuit configured to output at least selection signals for switching between selection and non-selection of the output signal lines to supply the detection signals to the detection circuit. The control circuit is configured to discharge an electric charge of each of the non-selected output signal lines different from the selected output signal lines.

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.