The present disclosure provides in one aspect a semiconductor device including an SOI substrate with an active semiconductor layer disposed on a buried insulating material layer, which, in turn, is formed on a base substrate material, a gate structure formed on the active semiconductor layer, and a back gate region provided in the base substrate material below the gate structure opposing the gate structure. Herein, the back gate region may be electrically insulated from the surrounding base substrate material via an isolation region surrounding the back gate region.

The present disclosure provides in one aspect a semiconductor device including an SOI substrate with an active semiconductor layer disposed on a buried insulating material layer, which, in turn, is formed on a base substrate material, a gate structure formed on the active semiconductor layer, and a back gate region provided in the base substrate material below the gate structure opposing the gate structure. Herein, the back gate region may be electrically insulated from the surrounding base substrate material via an isolation region surrounding the back gate region.

A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.

A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.

Various examples are provided for varactors (variable capacitors). Described are both simple and complex forms of variable capacitors and improvements thereof. The varactor can be sufficiently small (narrow) to be isolated on a chip as a single or plurality of devices. Devices may be expanded using multiple varactors. In addition, various varactors can further be improved by the inclusion of a thin material to reduce the resistance of the varactor device. Diodes may also be implemented using the disclosed forms.

Various examples are provided for varactors (variable capacitors). Described are both simple and complex forms of variable capacitors and improvements thereof. The varactor can be sufficiently small (narrow) to be isolated on a chip as a single or plurality of devices. Devices may be expanded using multiple varactors. In addition, various varactors can further be improved by the inclusion of a thin material to reduce the resistance of the varactor device. Diodes may also be implemented using the disclosed forms.

At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.

At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length extending in said elongated direction and is positioned on a first side of the at least one elongated semiconductor structure, and the second gate has a length extending in said elongated direction and is positioned on a second opposing side of the at least one elongated semiconductor structure. The first and second gates extend along the first and second sides of the at least one elongated semiconductor structure to define an overlap zone sandwiched between the first gate and the second gate, said overlap zone extending the full length of the first and/or second gate along the at least one elongated semiconductor structure.

A pyroelectric device having a substrate and a first electrode overlying at least a portion of the substrate. A plurality of spaced apart nanometer sized pyroelectric elements are electrically connected to and extending outwardly from the first electrode so that each element forms a single domain. A dielectric material is deposited in the space between the individual elements and a second electrode spaced apart from said first electrode is electrically connected to said pyroelectric elements.