In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm.Math.cm.sup.2, preferably below 1 mOhm.Math.cm.sup.2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm.Math.cm.sup.2, preferably less than 1 mOhm.Math.cm.sup.2.

A photovoltaic device and method of manufacture of a photovoltaic device including an assembly of at least two photovoltaic cells; and a lamination material inserted between each photovoltaic cell, each photovoltaic cell including: two current output terminals; at least one photovoltaic junction; current collection buses; and connection strips extending from the current collection buses to the current output terminals, all the current output terminals being placed on a single surface of the photovoltaic device is provided.

Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode connected to the first semiconductor region, and a second electrode connected to the back surface of the semiconductor substrate. The second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

Provided is solar cell-attached electronic equipment (100) including: a board (30) including a wire and a land; a conductive cushion material (31a, 31b) disposed on the board (30); and a solar cell (20) disposed to face the board (30). The solar cell (20) including an electrode (21a, 21b) disposed to face the land. The land and the electrode (21a, 21b) are electrically connected together through the conductive cushion material (31a, 31b).

A multijunction solar cell assembly and its method of manufacture including interconnected first and second discrete semiconductor body subassemblies disposed adjacent and parallel to each other, each semiconductor body subassembly including first top subcell, second (and possibly third) lattice matched middle subcells; a graded interlayer adjacent to the last middle solar subcell; and a bottom solar subcell adjacent to said graded interlayer being lattice mismatched with respect to the last middle solar subcell; wherein the interconnected subassemblies form at least a four junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body and the bottom solar subcell in the second semiconductor body.

A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

A solar cell in a stack structure having no step may include a solar cell, and an electrode formed on one surface of the solar cell, in which the solar cell is/are stacked on a center portion of a substrate with the electrode interposed therebetween, and the electrode is/are in contact with an electrode line coated on an edge portion of the substrate.

A solar cell module includes a plurality of cell strings having a plurality of solar cells, each solar cell having a semiconductor substrate, and a first conductivity-type electrode and a second conductivity-type electrode provided on a first surface of the semiconductor substrate, an interconnector electrically connecting a first conductivity-type electrode of a first solar cell, among the plurality of solar cells included in the plurality of cell strings, and a second conductivity-type electrode of a second solar cell adjacent to the first solar cell in a first direction, to connect the first and second solar cells in series, and a first shield positioned on a front surface of the interconnector between the first and second solar cells, and extending in a second direction crossing the first direction.