High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

The present application provides a display panel and a display device. The display panel includes a plurality of light-sensing circuits and a position detection circuit. The plurality of light-sensing circuits are disposed in the display panel and are arranged in an array. Each of the plurality of light-sensing circuits includes a light-sensing transistor. The present application disposes a quantum dot layer, which can absorb interactive light and convert its light intensity signal into an electrical signal, and determines an irradiation position of the interactive light through the position detection circuit, so that an interaction with light with a longer wavelength can be realized.

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a front side of a substrate 16 of opposite doping type with contact pads on the front side at respective ends of a first doped region of the pair. A voltage source applies a potential difference between the contact pads of the first doped region. On the front side, a contact pad of the second doped region of the pair provides an analog output signal representative of a longitudinal position of a center of gravity of an incident light pattern along the doped regions without external circuitry processing the output signal to obtain a readout of the longitudinal position. A resistive line may directly overly, abut and be in contact with at least a portion of the first doped region. A conductive line may directly overly, abut and be in contact with at least a portion of the second doped region. No backside contact or processing of the substrate is required or employed.

A semiconductor device is provided. The semiconductor device includes a substrate having a photoelectric conversion element, a first light-shielding layer disposed on the substrate and having a first aperture, a light-transmitting layer disposed on the first light-shielding layer, at least one second light-shielding layer disposed in the light-transmitting layer and having a second aperture, and a light-condensing structure disposed on the light-transmitting layer. The orthogonal projection of the second aperture on the bottom surface of the substrate has a long axis of symmetry and a short axis of symmetry perpendicular to the long axis of symmetry.

A system includes an array of photodiode sensors positioned on an autonomous vehicle. Each photodiode sensor in the array of photodiode sensors is oriented in a different direction and configured to generate electrical current signals in response to detecting a flashing light in a surrounding environment of the autonomous vehicle. The system also includes a processor coupled to the array of photodiode sensors. The processor is configured to determine a location of a source of the flashing light relative to the autonomous vehicle based on electrical current signals from at least one photodiode sensor in the array of photodiode sensors. The processor is also configured to generate a command to maneuver the autonomous vehicle based on the location of the source relative to the autonomous vehicle.

A photo detecting device comprising: a substrate; a plurality of photoelectric conversion elements provided to the substrate and configured to output a detection signal corresponding to light with which the photoelectric conversion elements are irradiated; at least one or more light emitting elements provided to the substrate; and a control circuit configured to set a wavelength of light output from the light emitting element by controlling an electric current flowing through the light emitting element.

A photodetector array includes a substrate, and an array of pixels over the substrate. Each pixel includes a set of diffraction gratings directly on a semiconductor photodetector. A pitch of the set of diffraction gratings associated with each pixel in the array of pixels are different to enable each pixel to detect a specific wavelength of light different than other pixels of the array of pixels. An air cavity may be provided in the substrate under the germanium photodetector to improve light absorption. A method of forming the photodetector array is also disclosed.

A transmitter of a wireless power transfer and data communication system comprising a transmitter system including a transmitter housing, one or more high-power laser sources, a laser controller, one or more low-power laser sources, one or more photodiodes, a beam steering system and lens assembly, and a safety system. High-power and low-power beams are directed to corresponding receivers and transceivers of a transceiver system inside a remote receiver system by the controller and the beam steering system and lens assembly. Low-power beams include optical communication to the transceiver system. The photodiodes of the transmitter system receive optical communication from the transceiver system. Low-power beams are co-propagated with and in close proximity to high-power beams substantially along an entire distance between the transmitter housing and the receiver system. The safety system instructs the controller to reduce the high-power sources in response to detected events.

Techniques regarding operating one or more parallel dipole line traps are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a parallel dipole line trap comprising a diamagnetic object positioned between a plurality of dipole line magnets. The system can also comprise a split photodetector sensor positioned adjacent to the parallel dipole line trap. The split photodetector sensor can detect a displacement of the diamagnetic object.