H01L31/02024

Laser light collecting assembly for a wireless power receiver
11876105 · 2024-01-16 · ·

A laser light collecting assembly for a wireless power receiver. The assembly includes a compound parabolic concentrator (CPC) mirror and an optical to electrical converter. The CPC mirror has curved internal walls that define an inlet aperture and connect the inlet aperture to an outlet aperture. The inlet aperture may be larger than the outlet aperture. The internal walls may focus a majority of the laser light entering the inlet aperture to the outlet aperture. The optical to electrical converter may be positioned adjacent to the outlet aperture and configured to receive the laser light exiting the outlet aperture so as to convert optical power in the laser light to electrical power.

Optical sensor with integrated pinhole

An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

HIGH SPEED PHOTOSENSITIVE DEVICES AND ASSOCIATED METHODS
20200111922 · 2020-04-09 ·

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

SYSTEM AND METHODS FOR DETECTING LIFETIME USING PHOTON COUNTING PHOTODETECTORS
20200072752 · 2020-03-05 · ·

Systems and methods for detecting lifetime of luminescent molecules using photodetectors configured to perform photon counting are described. The systems and methods may involve an array of photodetectors for detecting photons emitted from a sample, which may include the luminescent molecules, and detection circuitry associated with the array of photodetectors. The detection circuitry may be configured to count, during at least a first time period and a second time period, a quantity of incident photons at a photodetector in the array of photodetectors.

LIGHT-RECEIVING ELEMENT AND DISTANCE MEASUREMENT MODULE

A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device

An optical sensor device includes a semiconductor substrate including a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, where the doping region is adjacent to the trench, where the doping region has a doping type different from the read out node, and where the doping region has a doping concentration so that the doping region remains depleted during operation.

BRIGHTNESS CONTROL FOR AN AUGMENTED REALITY EYE-MOUNTED DISPLAY

A system controls a brightness of an augmented reality (AR) eye-mounted device. The system includes an eye-mounted display, a photodetector system, and a controller. The eye-mounted display includes a contact lens and a femtoprojector. The femtoprojector is contained in the contact lens and is configured to project an AR image to a user's retina. The AR image is overlaid on an external scene viewed by the user through the contact lens. The photodetector system detects a brightness level of the external scene. Based on the brightness level of the external scene, the controller adjusts a brightness level of the AR image projected to the user's retina. In some embodiments, the eye-mounted display receives image data defining the AR image and the controller adjusts a bit depth of the image data based on the brightness level of the AR image.

Semiconductor structure arrangement, methods for producing a semiconductor structure arrangement and optoelectronic device

An arrangement is disclosed. The arrangement comprises at least one semiconductor structure configured to convert a primary radiation into a secondary radiation; an encapsulation layer covering the at least one semiconductor structure; and at least one reflective layer arranged on the encapsulation layer. The semiconductor structure is arranged in a center of the arrangement, and a lateral extent of the arrangement is chosen such that an optically resonant condition is fulfilled for a wavelength of the secondary radiation in the encapsulation layer. Methods for producing an arrangement and an optoelectronic device are also disclosed.

Optical sensor

An optical sensor includes a light source, a light receiver, and a convex portion. The light source emits light to an object. The light receiver receives reflected light of the emitted light reflected by an object and generates a signal showing a light reception result. The convex portion has a height higher than a height of the light source and the light receiver. The convex portion is between the light source and the light receiver to block reflected light from the light receiver when light from the light source is reflected within a range of a predetermined distance from the convex portion. The light receiver outputs a signal to show a light reception result of equal to or less than a threshold amount of light indicating that the reflected light is not received in response to proximity of the object being within a range of a predetermined distance.

Sensor for flashing light detection
11899468 · 2024-02-13 · ·

A system includes an array of photodiode sensors positioned on an autonomous vehicle. Each photodiode sensor in the array of photodiode sensors is oriented in a different direction and configured to generate electrical current signals in response to detecting a flashing light in a surrounding environment of the autonomous vehicle. The system also includes a processor coupled to the array of photodiode sensors. The processor is configured to determine a location of a source of the flashing light relative to the autonomous vehicle based on electrical current signals from at least one photodiode sensor in the array of photodiode sensors. The processor is also configured to generate a command to maneuver the autonomous vehicle based on the location of the source relative to the autonomous vehicle.