A system for imaging at least one source of radiation with a mask and a plurality of detectors. The mask is characterized by a base pattern and configured to selectively transmit or block the radiation striking the mask based in part on the base pattern. The mask includes a plurality of tiles each repeating the base pattern. The number of the detectors is N and each of the tiles is divided into N respective portions. The plurality of detectors is positioned in a spaced apart configuration such that each of the plurality of detectors captures the radiation passing through different ones of the N respective portions of the plurality of tiles. The different ones of the N respective portions combine to form the base pattern.

A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.

A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an Al.sub.xGa.sub.1-xN layer, an In.sub.xAl.sub.1-xN layer and an In.sub.xAl.sub.yGa.sub.1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the Al.sub.xGa.sub.1-xN layer, the In.sub.xAl.sub.1-xN layer and the In.sub.xAl.sub.yGa.sub.1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.

Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal diffusion of a rapid temperature change, with the use of a high-speed temperature rising and falling apparatus without using ion implantation into the silicon substrate.

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

According to an embodiment, a photoelectric conversion element includes a photoelectric conversion layer that converts light to charges. The photoelectric conversion layer contains oligothiophene and fullerene selected from a group including a fullerene and derivatives thereof. A content ratio of the oligothiophene and the fullerene is 500:1 to 5:1 by weight.

An array substrate includes a base substrate; an array of a plurality of pixel units on the base substrate, each pixel unit including at least one subpixel for image display, at least some of the plurality of pixel units including a semiconductor photodetector in at least one subpixel for detecting biometric information; a plurality of first scan lines for driving image display; a plurality of second scan lines, each second scan line being connected to a row of subpixels having the semiconductor photodetector in a row of pixel units; and a plurality of read lines, each read line being connected to each semiconductor photodetector in a column of subpixels having the semiconductor photodetector in a column of pixel units.

An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

A new technique for sensing optical cavity mode mismatch using a mode converter formed from a cylindrical lens mode converting telescope, radio frequency quadrant photodiodes (RFQPDs), and a heterodyne detection scheme. The telescope allows the conversion of the Laguerre-Gauss basis to the Hermite-Gauss (HG) basis, which can be measured with quadrant photodiodes. Conversion to the HG basis is performed optically, measurement of mode mismatched signals is performed with the RFQPDs, and a feedback error signal is obtained with heterodyne detection.

An electronic device may have an optical sensor such as an ambient light sensor for detecting ambient light. The ambient light sensor may include one or more photodetectors and light control layers disposed over the photodetectors. The light control layers may include light control structures forming concentric strips of opaque or light absorbing material. The light control layers may include one layer of light control structures, two layers of light control structures, or three or more layers of light control structures separated by one or more intervening transparent substrates. The electronic device may include associated control circuitry configured to compute angular information on the ambient light based on readings output from the one or more photodetectors.