A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A color filter array and an image sensing device are disclosed. The color filter array includes a plurality of color cells arranged into a matrix. Each color cell has an intermediate region and a peripheral region. The peripheral region is configured around the intermediate region. The intermediate region forms a color filter object. Parts of the peripheral region form transparent objects. The transparent objects extend to edge parts of the color cells from an edge of the intermediate region. The remaining peripheral regions form the color filter objects. The color filter object is a high-refractive index material. The transparent object is a low-refractive index material. Therefore, in each color cell, the color filter objects configured in the intermediate region and the peripheral region reduce the spectral crosstalk, and the transparent objects configured in the peripheral region reduce the optical crosstalk, thereby enhancing the image quality sensed by sensor chips.

Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.

A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

A semiconductor device includes first and second photo-electric conversion elements, each having a light-receiving surface, disposed adjacent to each other, each outputting a light current that is a current corresponding to an intensity of received light, a first filter disposed on the light-receiving surface of the first photo-electric conversion element, a second filter disposed on the light-receiving surface of the second photo-electric conversion element, and a third filter disposed on the light-receiving surface of the second photo-electric conversion element and being in contact with the second filter, one end of the second filter and one end of the third filter overlapping one end of the first filter at a vicinity of a boundary between the first photo-electric conversion element and the second photo-electric conversion element.

A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2.sup.m, m≧1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

A light emitting device includes: a first light emitting element having a light emitting surface; an optical member having a lower surface, a first reflecting surface inclined to the lower surface, transmitting part of a first light emitted from the light emitting surface, and reflecting the rest upward, and a second reflecting surface located farther from the light emitting surface than the first reflecting surface and reflecting part or all of the first light passing through the first reflecting surface; and a photodetector located below the optical member and having a top surface provided with one or a plurality of light receiving regions including a first light receiving region configured to receive the first light reflected by the second reflecting surface. In a top view, part or all of the first light receiving region overlaps part or all of the first reflecting surface.

The present disclosure relates to a solid-state imaging device that is designed to reduce reflection of incident light at the sidewall surface of the light blocking layer of each phase difference detection pixel, and to an electronic apparatus.

A solid-state imaging device according to one aspect of the present disclosure includes: a normal pixel for generating a pixel signal; and a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF. In this solid-state imaging device, the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from the optical axis of the lens, and an antireflection portion that prevents reflection of the incident light gathered by the lens unit is formed on the light blocking layer. The present disclosure can be applied to back-illuminated CISs.

A light detection device includes a light detector including first detectors and second detectors both disposed along a main surface; a light coupling layer disposed on or above the light detector; and a light shielding film disposed on the light coupling layer. The light coupling layer includes a first low-refractive-index layer, a first high-refractive-index layer that is disposed on the first low-refractive-index layer and includes a first grating, and a second low-refractive-index layer that is disposed on the first high-refractive-index layer. The light shielding film includes a light transmitting region and a light shielding region adjacent to the light transmitting region. The light transmitting region faces two or more first detectors included in the first detectors, and the light shielding region faces two or more second detectors included in the second detectors.

An optical proximity sensor arrangement comprises a semiconductor substrate (100) with a main surface (101). A first integrated circuit (200) comprises at least one light sensitive component (201). The first integrated circuit is arranged on the substrate at or near the main surface. A second integrated circuit (300) comprises at least one light emitting component (301), and is arranged on the substrate at or near the main surface. A light barrier (400) is arranged between the first and second integrated circuits. The light barrier being designed to block light to be emitted by the at least one light emitting component from directly reaching the at least one light sensitive component. A multilayer mask (500) is arranged on or near the first integrated circuit and comprising a stack (501) of a first layer (502) of first elongated light blocking slats (503) and at least one second layer (504) of second elongated light blocking slats (505). The light blocking slats are arranged in the mask to block light, incident on the mask from a first region of incidence (701), and to pass light, incident on the mask from a second region of incidence (702), from reaching the at least one light sensitive component.