Disclosed herein is a radiation detector configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate positive charge carriers and negative charge carriers in the semiconductor single crystal. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The radiation detector comprises a first electrical contact in electrical contact with the semiconductor single crystal and a second electrical contact surrounding the first electrical contact or the semiconductor single crystal. The first electrical contact is configured to collect the negative charge carriers. The second electrical contact is configured to cause the positive charge carriers to drift out of the semiconductor single crystal.

Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg.sub.2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

Technology for light detection and ranging (LIDAR) sensor can include an optical signal source, an optical modulation array and optical detector on the same integrated circuit (IC) chip, multi-chip module (MCM) or similar solid-state package.

A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.

Photonically integrated normal incidence photodetectors (NIPDs) and associated in-plane waveguide structures optically coupled to the NIPDs can be configured to allow for both in-plane and normal-incidence detection. In photonic circuits with light-generation capabilities, such as integrated optical transceivers, the ability of the NIPDs to detect in-plane light is used, in accordance with some embodiments, to provide self-test functionality.

A sensor may be provided, including a substrate having a first semiconductor layer, a second semiconductor layer, and a buried insulator layer arranged between the first semiconductor layer and the second semiconductor layer. The sensor may further include a photodiode arranged in the first semiconductor layer; and a quenching resistive element electrically connected in series with the photodiode. The quenching resistive element is arranged in the second semiconductor layer, and the quenching resistive element is arranged over the photodiode but separated from the photodiode by the buried insulator layer.

An apparatus includes a first semiconductor region of a first conductivity type configured to collect a signal charge, and a connection region of a second conductivity type configured to feed a predetermined potential to a well including a second semiconductor region of the second conductivity type at a depth to which the connection region extends, a third semiconductor region of the second conductivity type at a position deeper than the connection region and the second semiconductor region, and a fourth semiconductor region between the second semiconductor region and the third semiconductor region, wherein a dopant for use in forming a semiconductor region of the first conductivity type is injected in the fourth semiconductor region, and a main carrier of the fourth semiconductor region is a carrier of the same conductivity type as a majority carrier of a semiconductor region of the second conductivity type.

An opto-electronic High Electron Mobility Transistor (HEMT) may include a current channel including a two-dimensional electron gas (2DEG). The opto-electronic HEMT may further include a photoelectric bipolar transistor embedded within at least one of a source and a drain of the HEMT, the photoelectric bipolar transistor being in series with the current channel of the HEMT.