In some embodiments, a semiconductor biosensor includes a plurality of wells, a plurality of detectors, and processing circuitry. Each well is configured to hold a test sample and to allow the test sample to be irradiated with ultraviolet radiation. The plurality of detectors are configured to capture a spectral response of the test sample irradiated with the ultraviolet radiation. Each well is coupled directly onto a detector, and each detector includes a) a photodiode and b) a planar optical antenna tuned to a particular wavelength. The planar optical antenna is between the photodiode and the well. The processing circuitry is coupled to the plurality of detectors, the processing circuitry being configured to calculate an average spectral response for the plurality of detectors.

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

Disclosed herein is a radiation detector configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate positive charge carriers and negative charge carriers in the semiconductor single crystal. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The radiation detector comprises a first electrical contact in electrical contact with the semiconductor single crystal and a second electrical contact surrounding the first electrical contact or the semiconductor single crystal. The first electrical contact is configured to collect the negative charge carriers. The second electrical contact is configured to cause the positive charge carriers to drift out of the semiconductor single crystal.

The present disclosure relates to a single-photon avalanche diode (SPAD) detector, comprising a semiconductor substrate (1) having a bulk region (10), at least one SPAD (2) at the bulk region of the semiconductor substrate, the SPAD having a junction multiplication region (20), and an operating circuitry (3) configured to generate an electric transport field for transferring photo-generated carriers from the bulk region of the semiconductor substrate to the multiplication junction region of the SPAD. The disclosure further relates to a method for operating a SPAD.

An apparatus and method, the apparatus comprising: at least one electrode configured to provide an electrical connection to a channel of two dimensional material wherein the electrode comprises a conductive layer and plurality of nanostructures wherein at least some of the nanostructures comprise a conductive core and a coating of two dimensional material.

A process of forming a light-receiving device type of avalanche photodiode (APD) is disclosed. The process includes steps of: (1) growing semiconductor layers on a semiconductor substrate, the semiconductor layers providing a first area on a top thereof; (2) thermally diffusing impurities within the semiconductor layers in a second area outside of the first area so as to leave a roughed surface in a top of the second area, the impurities laterally diffusing to form an diffusion edge locating inside of the first area; and (3) removing the semiconductor layers including the roughed surface thereof in the second area to form a mesa in the first area, the mesa including the diffusion edge in a periphery thereof but excluding the roughed surface.

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction configured with first and second semiconductor regions of different conductivity types. A buried portion is buried in the semiconductor substrate and includes an electrode and a dielectric member located between the electrode and the semiconductor substrate and in contact with the second semiconductor region. The second semiconductor region is located in a position deeper than the first semiconductor region. The buried portion is located to extend from a first surface to a position deeper than the first semiconductor region. Electric potentials are supplied to the first semiconductor region, the second semiconductor region, and the electrode in such a manner that an inversion layer occurring between the electrode and the second semiconductor region and the first semiconductor region are in contact with each other.

Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg.sub.2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.