A solar cell includes a semiconductor substrate, a bus-bar electrode, a plurality of finger electrodes, and a heavily doped layer. The semiconductor substrate has a surface. The bus-bar electrode is on the surface of the semiconductor substrate and extending along a first direction. The finger electrodes are on the surface of the semiconductor substrate and extending along a second direction. One of two ends of each of the finger electrodes is connected to the bus-bar electrode. An angle created by the first direction and the second direction is less than 180 degrees. The heavily doped layer is formed on the surface of the semiconductor substrate and includes a first portion and a plurality of second portions. The first portion is extending along the first direction. Each of the second portions is extending from the first portion along the second direction and beneath the corresponding finger electrode.

A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

A structure of partial tunnel oxide passivated contact for a photovoltaic cell and a photovoltaic module. The structure comprises: a first tunnel oxide layer disposed on a surface of a cell body, and a first polysilicon film disposed on a surface of the tunnel oxide layer. The surface of the cell body has a region for passivated contact and a region for light absorption, the first tunnel oxide layer is disposed in the region for passivated contact, and a projection of the first polysilicon film on the surface of the cell body is located in the region for passivated contact.

A solar cell panel includes a plurality of solar cells including first and second solar cells, and a plurality of wiring members electrically connecting the first and second solar cells. A first electrode of each of the first and second solar cells includes a first bus bar including a plurality of first pad portions. The plurality of first pad portions include a first end pad positioned on one end side of the first bus bar and on which an end of the wiring member is positioned, and a first extension pad positioned on the other end side of the first bus bar and on an extension of the wiring member. An area of the first end pad is different from an area of the first extension pad.

The present invention relates to a photo-charging energy storage device, and has been made in an effort to provide a photo-charging energy storage device which is capable of self-charging by combining a solar cell and a supercapacitor and used as a power source of an IoTs sensor.

The resulting photo-charging energy storage device according to the present invention includes: a solar cell; a conductive connector electrically connected to the solar cell, and combined with the solar cell; and a supercapacitor combined with the conductive connector, and charged with the solar cell via an electrical connection with the solar cell through the conductive connector.

A mixed silver powder and a conductive paste comprising the powder are disclosed. The mixed silver powder is obtained by mixing two or more spherical silver powders having different properties from each other. The mixed powder may minimize the disadvantages of the respective types of the two or more powders and maximize the advantages thereof, thereby improving the characteristics of products. In addition, by comprehensively controlling the particle size distribution of surface-treated mixed silver powder and the particle diameter and specific gravity of primary particles, a high-density conductor pattern, a precise line pattern, and the suppression of aggregation over time can be simultaneously achieved.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.