A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.

The invention provides an anti-glare coating of wide bandgap nanostructured oxide material so as to reduce the dazzling reflections of sunlight and avoid light pollution generated by spacecraft. The coating provides selective electrodeposition of a nanostructured wide bandgap oxide material on the metal contact grid on the surface of a solar panel of a spacecraft or a satellite in which the metal contact grid constitutes the cathode, and the resulting nanostructures have a width and spacing less than the wavelength ‘λ’ of the incident light or equal to ‘λ/n’ with λ located between 180 nm and 8μm, and ‘n’ being the refractive index of the nanostructured material so that for angles of incidence between 0.01 and 90 degrees less than 0.5% of light is reflected.

In a graphene photodetector, in which a graphene film is electrically connected a first electrode and to a second electrode, the first electrode and the second electrode are formed of the same conductive material, and the first electrode and the second electrode have an asymmetric structure in interface regions with the graphene film.

The present invention relates to formulations of ink based on nanoparticles of silver and of metal oxides. In particular, the present invention relates to formulations of ink based on nanoparticles of silver and of metal oxides, said inks being stable, having improved conductivity and making it possible to advantageously form electrodes and/or conductive tracks that are particularly suitable for photovoltaic cells, for example on a silicon and/or glass substrate.

The present invention relates to a silver coated glass frit used in a paste composition for forming a solar cell electrode, a method for preparing the same, and a silver paste composition using a silver coated glass frit for a solar cell. More specifically, the present invention relates to: a method for preparing a silver-coated glass frit wherein a silver coated glass frit, in which silver (Ag) is coated on a surface of the glass frit, is prepared through a reduction reaction occurring by adding, to a first solution containing silver nitrate (AgNO3) mixed with a glass frit and an amine, a second solution containing a reductant, and during the preparation process, a silver (Ag) coating layer is more uniformly formed on the surface of the glass frit by controlling the acidity of the first solution and the reaction temperature in the reduction reaction, thereby achieving an improved specific surface area; a silver-coated glass frit prepared by the method; and a silver paste composition for a solar cell wherein the composition is prepared by using the sliver-coated glass frit, and thus has significantly improved sintering characteristics and electrical conductivity.

Discussed is a paste composition for an electrode of a solar cell, the paste including a conductive powder, an organic vehicle, and an inorganic composition formed by including a plurality of metal compounds including a gallium compound including gallium as a component of a main network former of the inorganic composition.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

A photovoltaic cell and a fabricating method of the photovoltaic cell are provided. The photovoltaic cell includes: a substrate layer; an emitter layer, wherein the emitter layer is provided at a first face of the substrate layer; a plurality of front-face metal grid lines, wherein the plurality of front-face metal grid lines are provided in parallel at a side of the emitter layer that is away from the substrate layer; and a plurality of diffuse-reflection layers, wherein the plurality of diffuse-reflection layers are provided individually at a side of each of the front-face metal grid lines that are away from the emitter layer, and the diffuse-reflection layers are in correspondence with the front-face metal grid lines one to one. The diffuse-reflection layers are provided on the front-face metal grid lines to increase the diffuse reflection of the light emitting the front-face metal grid lines.