Patent classifications
H01L31/022425
Method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell
The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance. This object is achieved by first providing the silicon solar cell with the emitter layer, the contact grid and a rear contact, and electrically connecting the contact grid to one pole of a voltage source, then a contacting device that is electrically connected to the other pole of the voltage source is connected to the rear contact, and with the voltage source, a voltage is applied directed contrary to the forward direction of the silicon solar cell that is less than the breakdown voltage of the silicon solar cell and, when applying this voltage, a point light source is guided over the sun-facing side of the silicon solar cell and thereby a section of a subsection of the sun-facing side is illuminated and thus a current flow is induced in the subsection where the current flow relative to the section has a current density of 200 A/cm.sup.2 to 20,000 A/cm.sup.2 and acts on the subsection for 10 ns to 10 ms.
Photovoltaic cell, method for manufacturing same and photovoltaic module
Embodiments of the present disclosure provide a photovoltaic cell, a method for manufacturing the photovoltaic cell, and a photovoltaic module. The photovoltaic cell includes a substrate, and an emitter and a first passivation structure that are located on a first surface of the substrate, where the emitter is located between the substrate and the first passivation structure; a first electrode, penetrating through the first passivation structure and being in contact with the emitter; and a first eutectic, located between the first electrode and the emitter, where the first eutectic includes a material of the first electrode and a material of the emitter, and a part of the first electrode penetrates through the first eutectic and is in contact with the emitter.
SELF-FORMING NANOGAP METHOD AND DEVICE
A method for manufacturing a solid state device with a self-forming nanogap includes patterning a first metallic layer (M1) to form a first electrode on a substrate; depositing a self-assembling monolayer, SAM, layer over and around the first electrode; forming a second metallic layer (M2) in contact with the SAM layer and the substrate; and touchlessly removing parts of the second metallic layer (M2) that is formed directly above the SAM layer, to form a second electrode, and a nanogap between the first electrode and the second electrode.
DYNAMIC PATTERN TRANSFER PRINTING AND PATTERN TRANSFER SHEETS WITH SPACED GROUPS OF TRENCHES
Dynamic pattern transfer printing systems and method are provided, which decouple the design of the trench patterns on a source substrate for pattern transfer printing, from the resulting metallic paste lines patterns transferred to a receiving substrate, such as PV cells. The receiving substrate may be moved forward (along the scanning direction of the laser illumination used to transfer the paste from the trenches onto the receiving substrate) to reduce the pattern pitch with respect to the source substrate, and/or the receiving substrate may be moved backward (against the scanning direction) to increase the pattern pitch with respect to the source substrate. For example, dynamic pattern transfer printing may be used to accommodate different widths of the substrates for more effective pattern transfer, and/or to enable one-to-many pattern transfer technologies with high wafer throughput. Also, pattern transfer sheet with separate multiple groups of trenches are provided.
Solar cell superfine electrode transfer thin film, manufacturing method and application method thereof
Provided are a solar cell superfine electrode transfer thin film, manufacturing method and application method thereof. The electrode transfer thin film sequentially includes from bottom to top a substrate, a release layer, a resin layer and a hot melt adhesive layer; the resin layer is formed with electrode trenches therein; the electrode trenches are formed with electrodes therein; superfine conductive electrodes are continuously prepared on a transparent thin film via a roll-to-roll nanoimprinting method, the width of an electrode wire being 2 μm-50 μm, and the width of a typical line being 10 μm-30 μm. Directly attach the superfine electrodes of the hot melt adhesive layer to a solar cell by peeling off the substrate material, and sintering at a high temperature to volatilize the hot melt adhesive layer material while retaining the electrodes, thus the electrodes are integrally transferred, without poor local transfer.
PATTERN TRANSFER SHEETS AND METHODS EMPLOYING A RELEASING LAYER AND/OR PASTE MIXTURES
Pattern transfer sheets and methods are provided for printing paste patterns (e.g., thin fingers) with a high aspect ratio and for increasing throughput in pattern transfer printing. Trenches in the pattern transfer sheets, that are configured to be filled with printing paste and to enable releasing the printing paste from the trenches onto a receiving substrate upon illumination by a laser beam—are coated internally by a coating configured to disintegrate upon the illumination. The coating is configured to enhance the releasing of the paste—increasing throughput and printing accuracy. The receiving substrate may be cleaned after paste deposition by removing disintegration products of the coating therefrom. Alternatively or complementarily, laser absorbing dye may be mixed into the printing paste to facilitate its release from the trenches.
Apparatus for manufacture of at least two solar cell arrangements, system for manufacture of at least two shingled solar cells, and method for manufacture of at least two solar cell arrangements
The present disclosure provides a support device for conveying at least one solar cell element in a transport direction, wherein the support device comprises a support element configured for supporting the at least one solar cell element and an electric arrangement configured for providing an electrostatic force for holding the at least one solar cell element on the support element.
Application of Electrical Conductors of a Solar Cell
A method is disclosed for applying an electrical conductor to a solar cell, which comprises providing a flexible membrane with a pattern of groove formed on a first surface thereof, and loading the grooves with a composition comprising conductive particles. The composition is, or may be made, electrically conductive. Once the membrane is loaded, the grooved first surface of the membrane is brought into contact with a front or/and back of a solar cell. A pressure is then applied between the solar cell and the membrane(s) so that the composition loaded to the grooves adheres to the solar cell. The membrane(s) and the solar cell are separated and the composition in the groove is left on the solar cell surface. The electrically conductive particles in the composition are then sintered or otherwise fused to form a pattern of electrical conductor on the solar cell, the pattern corresponding to the pattern formed in the membrane(s).
Hybrid polysilicon heterojunction back contact cell
A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
Solar cell and solar cell panel including the same
A solar cell according to an embodiment of the present invention includes a semiconductor substrate; a first conductive type region positioned at or on the semiconductor substrate; and a first electrode electrically connected to the first conductive type region. The first electrode includes a plurality of first finger lines formed in a first direction and parallel to each other; and a plurality of first bus bars including a plurality of first pad portions positioned in a second direction intersecting with the first direction. The plurality of first finger lines include a contact portion which is in direct contact with the first conductive type region. The plurality of first pad portions have a different material, a composition, or a multi-layered structure that is different from that of the plurality of first finger lines, and are spaced apart from the first conductive type region.