A photovoltaic device with an improved n-type partner and a method for making the same. The device includes: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer of Zn.sub.1-xMg.sub.xO, wherein 0<x≦1, disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; and a conductive layer disposed on the chalcogen absorber layer. The method includes: forming a transparent conductive electrode layer on a transparent substrate; forming an n-type layer of Zn.sub.1-xMg.sub.xO, wherein 0<x≦1, on the transparent conductive electrode layer; forming a chalcogen absorber layer on the n-type layer; forming a conductive layer on the chalcogen absorber layer; and annealing to form the device. Another device having a superstrate configuration with the order of the layers reversed and a method for making the same is provided.

This disclosure provides photovoltaic cells and substrates with three dimensional optical architectures and methods of manufacturing the same. In particular, the disclosure relates to a continuously formed photovoltaic substrate, and to systems, devices, methods and uses for such a product, including the collection of solar energy.

Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A photoconductor assembly includes a substrate formed of an undoped and single-crystal semiconductor material that is configured to absorb electromagnetic energy, a plurality of electrodes arranged normal to the substrate, and a power supply that applies a voltage to the electrodes for modulating the electromagnetic energy through the substrate.

A perovskite-based solar cell comprising a transparent electrode disposed on a buffer layer that protects the perovskite from damage during the deposition of the electrode is disclosed. The buffer material is deposited using either low-temperature atomic-layer deposition, chemical-vapor deposition, or pulsed chemical-vapor deposition. In some embodiments, the perovskite material is operative as an absorption layer in a multi-cell solar-cell structure. In some embodiments, the perovskite material is operative as an absorption layer in a single-junction solar cell structure.

Systems and methods for generating electrical current from at least one photovoltaic cell is described herein. The photovoltaic cell may be disposed over a display of an electronic device. The photovoltaic cell may comprise first and second conductive layers and a photovoltaic layer. The first conductive layer may be etched such that a width of the metal layer is less than a width of the photovoltaic layer providing visibility to the display disposed below. In some embodiments, a capacitive touch sensor is disposed between the metal layer and the absorber layer for providing interaction with a user.

A method for electrical testing of a back contact solar cell applies a first side of a temporary passivation sheet to a frontside of a back contact solar cell, the first side of the temporary passivation sheet comprising at least a transparent dielectric layer. The temporary passivation sheet having a second side opposite the first side and comprising at least a transparent conductive coating. A voltage is applied between the transparent conductive coating and base metallization of the back contact solar cell. The frontside of the back contact solar cell is illuminated through the transparent conductive coating and the transparent dielectric layer. Electrical testing is performed on the back contact solar cell. The temporary passivation sheet is removed from the frontside of the back contact solar cell.

An indium tin oxide film containing by weight about 90% In.sub.2O.sub.3 and about 10% SnO.sub.2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 10.sup.20/cm.sup.3 and a carrier mobility greater than 30 cm.sup.2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.

A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.