Provided is a transparent solar cell including a first transparent electrode, a second transparent electrode, a light absorbing layer, a first color implementation layer, and a second implementation layer, wherein each of the first color implementation layer and the second implementation layer includes an insulation layer and a conductive layer. By using a double layer, it is possible to provide a colored transparent solar cell securing stability and durability and implementing colors on both sides.

Provided is a method of manufacturing a high efficiency flexible thin film solar cell module including a see-thru pattern. The method of manufacturing a flexible thin film solar cell module includes: sequentially forming a light-absorbing layer, a first buffer layer, and a first transparent electrode layer on the release layer; forming a second buffer layer on the exposed bottom surface of the light-absorbing layer; forming a P2 scribing pattern by removing at least one portion of each of the first buffer layer, the light-absorbing layer, and the second buffer layer; forming a second transparent electrode layer on the second buffer layer and the first transparent electrode layer exposed by the P2 scribing pattern; and forming a P4 see-thru pattern by selectively removing at least one portion of the first buffer layer, the light-absorbing layer, the second buffer layer, and the second transparent electrode layer.

A method for preparing a P-type crystalline silicon rear electrode, comprising: printing an all-aluminum paste on a P-type crystalline silicon rear passivation layer, then printing a linear interlayer-glass paste on the all-aluminum paste, and finally overprinting rear silver electrodes on the linear middle layer-glass paste. In a solar cell prepared using the method, good contact with silver and aluminum is kept without causing damage to the passivation layer and compromising the conductivity. In the present invention, a complete all-aluminum back surface field can be formed, leading to an improved field passivation property of an electrode region and reduced carrier recombination.

A perovskite-based solar cell comprising a transparent electrode disposed on a buffer layer that protects the perovskite from damage during the deposition of the electrode is disclosed. The buffer material is deposited using either low-temperature atomic-layer deposition, chemical-vapor deposition, or pulsed chemical-vapor deposition. In some embodiments, the perovskite material is operative as an absorption layer in a multi-cell solar-cell structure. In some embodiments, the perovskite material is operative as an absorption layer in a single junction solar cell structure.

A photovoltaic device according to the present disclosure includes: a first-conductivity-type semiconductor film provided on a back side of a semiconductor substrate; a second-conductivity-type semiconductor film in which at least a part thereof is provided in a position different, in plan view, from a position of the first-conductivity-type semiconductor film on the back side of the semiconductor substrate; a protective film, which is formed on a back side of the first-conductivity-type semiconductor film and a back side of the second-conductivity-type semiconductor film, and which includes a conductive portion and a non-conductive transformed portion; and an electrode film formed on a back side of the conductive portion. The transformed portion of the protective film is provided along a conduction path between a back surface of the first-conductivity-type semiconductor film and a back surface of the second-conductivity-type semiconductor film.

The purpose of the present invention is to improve the reliability of a photovoltaic cell. In the present invention, a photovoltaic cell (CL) comprises a back electrode (BE), a p-type semiconductor layer (semiconductor substrate 1S) disposed on the back electrode (BE), and an n-type semiconductor layer (NL) disposed on the semiconductor substrate (1S). The photovoltaic cell (CL) furthermore comprises: an anti-reflection film (ARF) disposed on the n-type semiconductor layer (NL), the anti-reflection film (ARF) being made of an insulating film; surface electrodes (SE) penetrating the anti-reflection film (ARF) to reach the n-type semiconductor layer (NL); and an electroconductive film (CF) disposed on the anti-reflection film (ARF) so as to cover the surface electrodes (SE), the electroconductive film (CF) being transparent and being electrically connected to the n-type semiconductor layer (NL).

A solar cell is provided. The solar cell includes a p-n junction and a coating. The p-n junction includes upper and lower layers. The coating overlies the upper layer of the p-n junction. The coating includes a transparent conductive layer and a gate dielectric layer, which is interposed between the transparent conductive layer and the upper layer of the p-n junction. The solar cell further includes a front-contact and a back-contact, which are electrically communicative with each other. The front-contact is electrically communicative with the upper layer of the p-n junction through the coating. The back-contact is electrically communicative with the lower layer of the p-n junction. The solar cell can also include a contact via electrically communicative with the back-contact and with the transparent conductive layer.

A photovoltaic charging system having a narrow-spectrum light source attuned to an absorption band of a photovoltaic cell may achieve power delivery of at least 0.5 mW/10,000 μm.sup.2 upon stimulation of the photovoltaic cell with narrow-spectrum light.

In one aspect, nanostructured films are described herein comprising controlled architectures on multiple length scales (e.g. ≥3). As described further herein, the ability to control film properties on multiple length scales enables tailoring structures of the films to specific applications including, but not limited to, optoelectronic, catalytic and photoelectrochemical cell applications. In some embodiments, a nanostructured film comprises a porous inorganic scaffold comprising particles of an electrically insulating inorganic oxide. An electrically conductive metal oxide coating is adhered to the porous inorganic scaffold, wherein the conductive metal oxide coating binds adjacent particles of the insulating inorganic oxide.

A method for film-forming a buffer layer to be used for a solar cell, the buffer layer being disposed between a light absorbing layer and a transparent conductive film. Specifically, in this buffer layer film-forming method, a solution is formed into a mist, the solution containing zinc and almuminum as metal raw materials of the buffer layer. Then, a substrate disposed in the atmosphere is heated. Then, the mist of the solution is sprayed to the substrate being heated.