Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.

In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.

A photon avalanche diode, includes a quartz substrate, a doped HgCdTe contact layer on the substrate, an absorbing HgCdTe layer on the contact layer, a larger bandgap HgCdTe layer on the absorbing layer, a doped HgCdTe layer for a top contact layer on the larger bandgap HgCdTe layer, and a non-absorbing HgCdTe metasurface on the top contact layer.

Photo-detection device (100) including a semiconductor substrate (110) made of Cd.sub.xHg.sub.1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region. According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170). A significant reduction in the dark current and an optimal charge carrier collection are thus combined.

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

In one aspect, a medical device may be configured to couple to a body, the medical device comprising: a substrate configured to couple to a user's skin; a photodetector comprising an array of quantum dots, wherein the array of quantum dots includes a first quantum dot of a first size and a second quantum dot of a second size, wherein the first size is different from the second size; a first illuminator configured to emit light at a first range of wavelengths; and a second illuminator configured to emit light at a second range of wavelengths. The second range of wavelengths may be different from the first range of wavelengths.

Embodiments of the present application provide an array substrate, a fabrication method for an array substrate, and a display panel. The array substrate includes a substrate, a gate, a gate insulating layer, a seed layer, and a semiconductor layer that are sequentially stacked. A surface of the semiconductor layer away from the seed layer has a concave-convex structure formed by growth of nanocrystalline grains, which enhances light absorption of the semiconductor layer and solves the problems of poor light sensitivity and slow response speed of semiconductor devices.

A method of detecting radiation from a source and a radiation detection system embodying the principles of the method are described. The method comprises: positioning a detector to receive radiation from the source; applying a multiplexing transformation to radiation from the source to create complexity in three dimensions in the pattern of radiation from the source; receiving a plurality of responses each being a response to an interaction with incident radiation occurring within the detector; determining, for each of the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least a position in three dimensions of the interaction within the detector; processing the said plurality of responses in accordance with the determined position in three dimensions of each interaction within the detector and drawing inferences therefrom regarding the pattern of radiation from the source.

A method of detecting radiation from a source and a radiation detection system embodying the principles of the method are described. The method comprises: positioning a detector to receive radiation from the source; applying a multiplexing transformation to radiation from the source to create complexity in three dimensions in the pattern of radiation from the source; receiving a plurality of responses each being a response to an interaction with incident radiation occurring within the detector; determining, for each of the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least a position in three dimensions of the interaction within the detector; processing the said plurality of responses in accordance with the determined position in three dimensions of each interaction within the detector and drawing inferences therefrom regarding the pattern of radiation from the source.