A laser-assisted microfluidics manufacturing process has been developed for the fabrication of additively manufactured structures. Roll-to-roll manufacturing is enhanced by the use of a laser-assisted electrospray printhead positioned above the flexible substrate. The laser electrospray printhead sprays microdroplets containing nanoparticles onto the substrate to form both thin-film and structural layers. As the substrate moves, the nanoparticles are sintered using a laser beam directed by the laser electrospray printhead onto the substrate.

A laser-assisted microfluidics manufacturing process has been developed for the fabrication of additively manufactured structures. Roll-to-roll manufacturing is enhanced by the use of a laser-assisted electrospray printhead positioned above the flexible substrate. The laser electrospray printhead sprays microdroplets containing nanoparticles onto the substrate to form both thin-film and structural layers. As the substrate moves, the nanoparticles are sintered using a laser beam directed by the laser electrospray printhead onto the substrate.

The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).

The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).

A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

A ferroelectric memory device according to one embodiment includes a semiconductor substrate, a fin structure disposed on the semiconductor substrate and having a trench, the trench having a bottom surface and a sidewall surface; a ferroelectric layer disposed on the bottom surface and the sidewall surface of the trench; a plurality of resistor layers stacked vertically in the trench, each resistor layer of the plurality of resistor layers having a different electrical resistance; and a gate electrode layer electrically connected to the each resistor layer in the plurality of resistor layers. The plurality of resistor layers are disposed between the gate electrode layer and the ferroelectric layer.

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideb and optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Provided is a solar cell, including: an N-type semiconductor substrate having a front surface and a rear surface opposite to the front surface; a boron diffusion layer arranged on the front surface of the N-type semiconductor substrate, a first passivation layer is provided on a surface of the boron diffusion layer, and a first electrode is provided passing through the first passivation layer to form an electrical connection with the N-type semiconductor substrate; and a phosphorus-doped polysilicon layer arranged on the rear surface of the N-type semiconductor substrate. A silicon oxide layer containing nitrogen and phosphorus is provided between the rear surface of the N-type semiconductor substrate and the phosphorus-doped polysilicon layer, a second passivation layer is provided on a surface of the phosphorus-doped polysilicon layer, and a second electrode is provided passing through the second passivation layer to form an electrical connection with the phosphorus-doped polysilicon layer.

Provided is a solar cell, including: an N-type semiconductor substrate having a front surface and a rear surface opposite to the front surface; a boron diffusion layer arranged on the front surface of the N-type semiconductor substrate, a first passivation layer is provided on a surface of the boron diffusion layer, and a first electrode is provided passing through the first passivation layer to form an electrical connection with the N-type semiconductor substrate; and a phosphorus-doped polysilicon layer arranged on the rear surface of the N-type semiconductor substrate. A silicon oxide layer containing nitrogen and phosphorus is provided between the rear surface of the N-type semiconductor substrate and the phosphorus-doped polysilicon layer, a second passivation layer is provided on a surface of the phosphorus-doped polysilicon layer, and a second electrode is provided passing through the second passivation layer to form an electrical connection with the phosphorus-doped polysilicon layer.

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.