The present invention relates to a silicon carbide telescopic detector for ionizing radiation or a measuring instrument equipped with such a telescopic detector for identifying the type of ionizing radiation and/or measuring a dose released by the radiation, a detector production procedure, as well as uses and original methods which use the detector.

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.

A voltage tunable solar-blind UV detector using a EG/SiC heterojunction based Schottky emitter bipolar phototransistor with EG grown on p-SiC epi-layer using a chemically accelerated selective etching process of Si using TFS precursor.

The present invention discloses an H-3 silicon carbide PN-type radioisotopic battery and a manufacturing method therefor. The radioisotopic battery has a structure including, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped SiC substrate, an N-type SiC epitaxial layer, and a P-type SiC epitaxial layer. A P-type SiC ohmic contact doped layer is disposed on a partial upper area of the P-type SiC epitaxial layer, a P-type ohmic contact electrode is disposed on top of the P-type SiC ohmic contact doped layer, a SiO.sub.2 passivation layer is disposed on an upper area of the P-type SiC epitaxial layer where the P-type ohmic contact doped layer is removed, and an H-3 radioisotope source is provided on the top of the SiO.sub.2 passivation layer.

The present invention discloses an H-3 silicon carbide PN-type radioisotopic battery and a manufacturing method therefor. The radioisotopic battery has a structure including, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped SiC substrate, an N-type SiC epitaxial layer, and a P-type SiC epitaxial layer. A P-type SiC ohmic contact doped layer is disposed on a partial upper area of the P-type SiC epitaxial layer, a P-type ohmic contact electrode is disposed on top of the P-type SiC ohmic contact doped layer, a SiO.sub.2 passivation layer is disposed on an upper area of the P-type SiC epitaxial layer where the P-type ohmic contact doped layer is removed, and an H-3 radioisotope source is provided on the top of the SiO.sub.2 passivation layer.

A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device.

A transparent multi-layer assembly includes a transparent carrier structure comprising a polymer material and an electrically conductive transparent layer comprising an electrically conductive oxide. A silicon carbide layer is arranged as an adhesion promoter between the transparent carrier structure and the electrically conductive transparent layer.

A transparent multi-layer assembly includes a transparent carrier structure comprising a polymer material and an electrically conductive transparent layer comprising an electrically conductive oxide. A silicon carbide layer is arranged as an adhesion promoter between the transparent carrier structure and the electrically conductive transparent layer.

A single photon avalanche (SPAD) device configured to detect visible to infrared light includes a substrate and a trench coupled to the substrate. The trench has a lattice mismatch with the substrate and has a height equal to or greater than its width. The device further includes a substantially defect-free semiconductor region that includes photosensitive material. The semiconductor region includes a well coupled to the trench and doped a first type. The well is configured to detect a photon and generate a current. The semiconductor region also includes a region formed in the well and doped a second type opposite to the first type. The well is configured to cause an avalanche multiplication of the current. The trench and the well form a first electrode and the region forms a second electrode.

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.