Embodiments disclosed herein facilitates the monitoring of direct ultraviolet B (UVB) radiation exposure by a person via a system having a sensor (such as Lanthanum doped lead zirconate titanate (PLZT) thin-film sensors or other ferroelectric-based sensors) sensitive to UVB radiation. The system beneficially provides current real-time dosage information associated with Vitamin D production by the person as well as real-time indication of safe exposure and/or harmful exposure to current UVB radiation conditions while also, in some embodiments, takes into consideration a person's age, skin type and sensitivity, body surface area exposed.

Embodiments disclosed herein facilitates the monitoring of direct ultraviolet B (UVB) radiation exposure by a person via a system having a sensor (such as Lanthanum doped lead zirconate titanate (PLZT) thin-film sensors or other ferroelectric-based sensors) sensitive to UVB radiation. The system beneficially provides current real-time dosage information associated with Vitamin D production by the person as well as real-time indication of safe exposure and/or harmful exposure to current UVB radiation conditions while also, in some embodiments, takes into consideration a person's age, skin type and sensitivity, body surface area exposed.

The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

Various forms of Mg.sub.xGe.sub.1-xO.sub.2-x are disclosed, where the Mg.sub.xGe.sub.1-xO.sub.2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of Mg.sub.xGe.sub.1-xO.sub.2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1-xO.sub.2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

The system can generally have a substrate, a layered structure supported by the substrate, the layered structure including a first layer being of a first material electrically conductive and transparent to said electromagnetic radiation, a second layer being of a second material electrically conductive and having a first photocurrent generation spectrum covering a first band of energy levels, a middle layer of a third material having a second photocurrent generation spectrum covering a second band of the energy levels of the electromagnetic radiation, the second band complementing the first band; the layered structure connected via the first layer and second layer as an electrical component of an electrical circuit of an acquisition module.

The system can generally have a substrate, a layered structure supported by the substrate, the layered structure including a first layer being of a first material electrically conductive and transparent to said electromagnetic radiation, a second layer being of a second material electrically conductive and having a first photocurrent generation spectrum covering a first band of energy levels, a middle layer of a third material having a second photocurrent generation spectrum covering a second band of the energy levels of the electromagnetic radiation, the second band complementing the first band; the layered structure connected via the first layer and second layer as an electrical component of an electrical circuit of an acquisition module.

Disclosed is a metal-semiconductor contact structure based on two-dimensional (2D) semimetal electrodes, including a semiconductor module and a metal electrode module, where the semiconductor module is a 2D semiconductor material, and the metal electrode module is a 2D semimetal material with no dangling bonds on its surface; the 2D semiconductor material and the 2D semimetal material are interfaced with a Van der Waals interface with a surface roughness of 0.01-1 nanometer (nm) and no dangling bonds on the surface, the 2D semiconductor material and the 2D semimetal material are spaced less than 1 nm apart.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

Preparation of two-dimensional indium selenide, other two-dimensional materials and related compositions via surfactant-free deoxygenated co-solvent systems.