A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

A UV radiation detector includes: a diode including a substrate having a first side and a second side, the first side and the second side being located on opposing faces of the substrate, an active layer including rocksalt phase crystalline structure CaS disposed on the first side of the substrate, an electrical contact disposed on the second side of the substrate, and a semi-transparent conducting layer disposed on the active layer; and a circuit connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector detects radiation having a wavelength between 200 and 280 nm.

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

Electromagnetic energy collecting devices are described wherein a plasmonic near field resonating system absorbs light and transfers the light energy by plasmonic near field resonance to a semiconducting material that then separates the charge. The charge is then transported out of the device, converting light energy into electrical energy. The multiple nanoparticle plasmonic resonators are closely coupled with an electrically-conductive layer that creates electromagnetic resonances that provide for near perfect absorption of the incoming light. The device can be used both as an optical sensor and as a photovoltaic electromagnetic energy to electrical energy converter.

A method is for making an optical detector device. The method may include forming a reflector layer carried by a substrate, forming a first dielectric layer over the reflector layer, and forming a graphene layer over the first dielectric layer and having a perforated pattern therein.

A method is for making an optical detector device. The method may include forming a reflector layer carried by a substrate, forming a first dielectric layer over the reflector layer, and forming a graphene layer over the first dielectric layer and having a perforated pattern therein.

An electromagnetic wave detector, which photoelectrically converts and detects an electromagnetic wave incident on a graphene layer, including: a substrate having a front surface and a back surface; a lower insulating layer provided on the front surface of the substrate; a ferroelectric layer and a pair of electrodes provided on the lower insulating layer, the pair of electrodes arranged to face each other with the ferroelectric layer sandwiched therebetween; an upper insulating layer provided on the ferroelectric layer; and a graphene layer arranged on the lower insulating layer and the upper insulating layer to connect the two electrodes. Alternatively, the electromagnetic wave detector includes: a graphene layer provided on the lower insulating layer; and a ferroelectric layer provided on the graphene layer with an upper insulating layer interposed therebetween and a pair of electrodes provided on the graphene layer to face each other with the ferroelectric layer sandwiched therebetween.