A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

The thermal sensing layer for a microbolometer includes a Ge.sub.1-xSn.sub.x film layer, where 0.17x0.25. The Ge.sub.1-xSn.sub.x film layer may be deposited on a substrate layer, such as pure silicon. An additional layer of silicon dioxide may be added, such that the silicon dioxide layer is sandwiched between the silicon substrate and the Ge.sub.1-xSn.sub.x film. In order to make the Ge.sub.1-xSn.sub.x thin film layer, germanium (Ge) and tin (Sn) are simultaneously sputter deposited on the substrate, where the atomic ratio of germanium to tin is between 0.83:0.17 and 0.75:0.25 inclusive. The sputter deposition may occur in an argon atmosphere, with the germanium having a deposition rate of 9.776 nm/min, and with the tin having a deposition rate between 2.885 nm/min and 4.579 nm/min.

The thermal sensing layer for a microbolometer includes a Ge.sub.1-xSn.sub.x film layer, where 0.17x0.25. The Ge.sub.1-xSn.sub.x film layer may be deposited on a substrate layer, such as pure silicon. An additional layer of silicon dioxide may be added, such that the silicon dioxide layer is sandwiched between the silicon substrate and the Ge.sub.1-xSn.sub.x film. In order to make the Ge.sub.1-xSn.sub.x thin film layer, germanium (Ge) and tin (Sn) are simultaneously sputter deposited on the substrate, where the atomic ratio of germanium to tin is between 0.83:0.17 and 0.75:0.25 inclusive. The sputter deposition may occur in an argon atmosphere, with the germanium having a deposition rate of 9.776 nm/min, and with the tin having a deposition rate between 2.885 nm/min and 4.579 nm/min.

A device for sensing suspension operations or biometrics includes a light emitting module and a sensing layer. The light emitting module and the sensing layer are sequentially stacked. The light emitting module includes a plurality of light emitting elements emitting light near the infrared and the sensing layer includes a plurality of quantum dot thin film transistors. The quantum dot thin film transistor includes an active layer and quantum dots covering the active layer. The near-infrared light emitted by the plurality of light emitting elements is reflected by an animate object and received by the quantum dot thin film transistors. The sensing device can better sense suspension operations or biometrics. A method for the procedure is also disclosed.

A device for sensing suspension operations or biometrics includes a light emitting module and a sensing layer. The light emitting module and the sensing layer are sequentially stacked. The light emitting module includes a plurality of light emitting elements emitting light near the infrared and the sensing layer includes a plurality of quantum dot thin film transistors. The quantum dot thin film transistor includes an active layer and quantum dots covering the active layer. The near-infrared light emitted by the plurality of light emitting elements is reflected by an animate object and received by the quantum dot thin film transistors. The sensing device can better sense suspension operations or biometrics. A method for the procedure is also disclosed.

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

An electromagnetic wave detector, which photoelectrically converts and detects an electromagnetic wave incident on a graphene layer, including: a substrate having a front surface and a back surface; a lower insulating layer provided on the front surface of the substrate; a ferroelectric layer and a pair of electrodes provided on the lower insulating layer, the pair of electrodes arranged to face each other with the ferroelectric layer sandwiched therebetween; an upper insulating layer provided on the ferroelectric layer; and a graphene layer arranged on the lower insulating layer and the upper insulating layer to connect the two electrodes. Alternatively, the electromagnetic wave detector includes: a graphene layer provided on the lower insulating layer; and a ferroelectric layer provided on the graphene layer with an upper insulating layer interposed therebetween and a pair of electrodes provided on the graphene layer to face each other with the ferroelectric layer sandwiched therebetween.

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.