Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

An element includes an electron transportation layer containing nanoparticles, a QD layer containing QD phosphor particles, and a mixed layer sandwiched between the electron transportation layer and the QD layer to be adjacent to these layers. The mixed layer contains QD phosphor particles and nanoparticles.

A photovoltaic device (10) comprising a photoactive body between two electrodes (contact 1, contact 2). The body comprises semiconductor particles (24) embedded in a semiconductor matrix (22). The particles and matrix are electronically or optically coupled so that charge carriers generated in the particles are transferred directly or indirectly to the matrix. The matrix transports positive charge carriers to one of the electrodes and negative charge carriers to the other electrode. The particles are configured so that they do not form a charge carrier transport network to either of the electrodes and so perform the function of charge carrier generation but not charge carrier transport.

The present disclosure relates to a sunlight converting device including a wavelength converting film using a wavelength conversion material such as a quantum dot or an inorganic phosphor. More particularly, the present disclosure provides a sunlight converting device including a wavelength converting film using a wavelength conversion material, which can optimize plant growth and provide improved plant quality by installing a wavelength converting film on which a wavelength conversion material is applied so as to be converted into a predetermined wavelength and output to a greenhouse (glasshouse), a vinyl house or a microalga culture facility, varying the sunlight irradiation area of the wavelength converting film, and supplying light of various wavelengths required for species of plant including microalgae or growth cycles thereof.

Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

A phototransistor device to act as an artificial photonic synapse includes a substrate and a graphene source-drain channel patterned on the substrate. A perovskite quantum dot layer is formed on the graphene source-drain channel. The perovskite quantum dot layer is methylammonium lead bromide material. A method of operating the phototransistor device as an artificial photonic synapse includes applying a first fixed voltage to a gate of the phototransistor and a second fixed voltage across the graphene source-drain channel. A presynaptic signal is applied as stimuli across the graphene source-drain channel. The presynaptic signal includes one or more pulses of light or electrical voltage. A current across the graphene source-drain channel is measured to represent a postsynaptic signal.

Gate-controlled quantum dots based on silicon-germanium (SiGe) alloy heterostructures are provided. Also provided are quantum computing systems incorporating the gate-controlled quantum dots. The quantum dots are formed in a semiconductor heterostructure in which a SiGe alloy quantum well is sandwiched between SiGe alloy barriers or between Ge barriers. The presence of germanium in the quantum dots increases the average valley splitting for quantum dots confined in the SiGe. As a result, the yield of quantum dots having a sufficiently high valley splitting for device applications is increased by the use of a SiGe alloy in the quantum well.

Disclosed are a quantum dot display panel, a manufacturing method thereof and a display device. The manufacturing method includes: forming a first functional layer on a substrate; processing the first functional layer so that the first functional layer includes a processed region and the processed region includes ions having a first polarity; forming a quantum dot layer having a second polarity in the processed region. The second polarity and the first polarity are opposite electrical polarities.