Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

An apparatus and method, the apparatus including a charge carrier wherein the charge carrier includes a continuous three dimensional framework including a plurality of cavities throughout the framework; sensor material provided throughout the charge carrier; wherein the sensor material is configured to transduce a detected input and change conductivity of the charge carrier in dependence of the detected input.

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Disclosed is a quantum dot light emitting device including a ligand-substituted quantum dot light emitting layer with a polymer having amine groups. The introduction of the ligand-substituted quantum dot light emitting layer with a polymer having amine groups changes the energy level of an electron transport layer and enables control over the charge injection properties of the device so that the flow of electrons can be controlled. In addition, the ligand substitution is effective in removing oleic acid as a stabilizer of quantum dots to prevent an increase in driving voltage caused by the introduction of the additional material, achieving markedly improved efficiency of the device. Also disclosed is a method for fabricating the quantum dot light emitting device.

An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated.

A process for the post-deposition treatment of colloidal quantum dot films to improve photodetector performance. A colloidal quantum dot film is first deposited on a suitable substrate or device structure, given a ligand exchange, and then allowed to dry into a completed film. Next, a solution is prepared consisting of dilute H.sub.2O.sub.2 mixed with a polar solvent such as isopropyl alcohol solution. The prepared film and substrate are then immersed into the prepared solution over a set interval of time. After which, the film is removed and rinsed with solvent, then dried with clean N.sub.2 gas. After this treatment, the colloidal quantum dot film is ready for use as a photodetector.

The present disclosure relates to a composition that includes a particle and a surface species, where the particle has a characteristic length between greater than zero nm and 100 nm inclusively, and the surface species is associated with a surface of the particle such that the particle maintains a crystalline form when the composition is at a temperature between −180° C. and 150° C.

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.