Structures for a photodetector or light absorber and methods of forming a structure for a photodetector or light absorber. The structure includes a pad, a waveguide core adjoined to the pad, and a light-absorbing layer on the pad. The waveguide core includes a first longitudinal axis, and the light-absorbing layer includes a second longitudinal axis and an end surface intersected by the second longitudinal axis. The end surface of the light-absorbing layer is positioned adjacent to the waveguide core. The first longitudinal axis of the first waveguide core is inclined relative to the second longitudinal axis of the light-absorbing layer and/or the end surface slanted relative to the second longitudinal axis.

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: a spiral fin structure comprising semiconductor substrate material and dielectric material; a photosensitive semiconductor material over sidewalls and a top surface of the spiral fin structure, the photosensitive semiconductor material positioned to capture laterally emitted incident light; a doped semiconductor material above the photosensitive semiconductor material; and contacts electrically contacting the semiconductor substrate material and the doped semiconductor material from a top surface thereof.

A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

A photoelectric conversion element for detecting the spot size of incident light, including a photoelectric conversion substrate provided with two main surfaces, and multiple first sensitivity sections and second sensitivity sections arranged in a prescribed direction. When sensitivity regions on the respective main surfaces of the multiple first sensitivity sections are defined as first sensitivity regions, and sensitivity regions that appear on the main surfaces of the second sensitivity sections are defined as second sensitivity regions, each of the first sensitivity regions receives at least a part of light incident on the main surfaces, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity regions in the irradiation region with respect to the first sensitivity regions other than those in the irradiation region and the second sensitivity regions is decreased.

Photovoltaic devices and methods for fabricating a photovoltaic devices. The method includes applying a coating layer that surrounds each of a plurality of silicon particles. The method also includes implanting the plurality of silicon particles into a substrate layer such that an exposed portion of each of the plurality of silicon particles extends away from a surface of the substrate layer. The method further includes removing a portion of the coating layer that is positioned around the exposed portion of each of the plurality of silicon particles. The method also includes placing an insulator layer on the surface of the substrate layer. The method further includes placing a selective carrier transport layer on the exposed portion of each of the plurality of silicon particles.

A semiconductor device includes a dielectric layer, a first trench located in the dielectric layer, a first semiconductor located in the first trench, a second semiconductor layer and an electrical connector. The dielectric layer has a first surface. The second semiconductor layer includes an active portion connecting the first semiconductor layer, and the electrical connector is located on the first surface and connects the second semiconductor layer.

A monolithic optoelectronic integrated circuit is provided, including: a substrate including photonic integrated device region and a peripheral circuit region; a first GaN-based multi-quantum well optoelectronic PN-junction device including a first P-type ohmic contact electrode and a first N-type ohmic contact electrode; and a first GaN-based field-effect transistor, where the first GaN-based field-effect transistor includes a first gate dielectric layer disposed on the surface of the substrate and having a first recess, a first gate filled within the first recess, and a first source and a first drain that are disposed the opposite sides of the first gate, where the first source is electrically connected to the first P-type ohmic contact electrode, the first drain is configured to be electrically connected to a first potential.

A time of flight sensor includes at least one pixel, including: an epitaxially-grown Ge-based photosensitive structure including an upper portion and a trunk portion, a Si-based photocurrent collecting structure, a dielectric material layer arranged at least between the upper portion of the photosensitive structure and the photocurrent collecting structure, wherein the trunk portion of the photosensitive structure is arranged within an aperture in the dielectric material layer, and at least one n-contact configured to collect electrons of a photocurrent and at least one p-contact configured to collect holes of the photocurrent, the at least one n-contact and p-contact arranged in the photocurrent collecting structure.

A solar cell includes a semiconductor substrate; a plurality of band-like first semiconductor layers and a plurality of second semiconductor layers provided alternatively on a back surface side of the semiconductor substrate; a band-like first electrode stacked on the first semiconductor layer and a band-like second electrode stacked on the second semiconductor layer; and a band-shaped or linear insulating body stacked on a back surface of the first semiconductor layer in a region distanced from the first electrode and an edge on a side of the second semiconductor layer.

A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.