The present disclosure is directed to a diode including a first doped structure, doped with a first type of material and forming at least part of an isolation structure for the diode; at least one contact structure located within the first doped structure, the at least one contact structure forming one of the cathode or anode of the diode; a second doped structure, doped with a second type of material, and forming at least one depletion region or PN junction with the first doped structure; at least one second contact structure located within the second doped structure, the at least one second contact structure forming the other of the anode or the cathode of the diode; at least one further contact structure, doped with the first type of material, the at least one further contact structure forming at least one further depletion region or further PN junction, such that the at least one further depletion region is configured to steer charge from the at least one depletion region and thus decrease the sensitivity of the diode.

A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A solar cell includes: a semiconductor substrate which includes a first principal surface and a second principal surface; a first semiconductor layer of the first conductivity type disposed above the first principal surface; and a second semiconductor layer of a second conductivity type disposed below the second principal surface. The semiconductor substrate includes: a first impurity region of the first conductivity type; a second impurity region of the first conductivity type disposed between the first impurity region and the first semiconductor layer; and a third impurity region of the first conductivity type disposed between the first impurity region and the second semiconductor layer. A concentration of an impurity in the second impurity region is higher than a concentration of the impurity in the third impurity region, and the concentration of the impurity in the third impurity region is higher than a concentration of the impurity in the first impurity region.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.

Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.

Disclosed herein are devices and methods for photonic energy storage and on-demand photonic energy discharge. The devices and methods disclosed herein may provide improved temporal control over photonic energy discharge as compared to conventional fluorescent or phosphorescent materials. The devices and methods disclosed herein may provide mechanisms for on-demand photonic energy which may be used to generate light or may converted to electrical energy. A device of this disclosure may comprise a phosphorescent material and a fluorescent material. The phosphorescent material may be configured to absorb photonic energy. The phosphorescent material may store the photonic energy, or the phosphorescent material may transfer the photonic energy to the fluorescent material. The fluorescent material may be configured to emit photonic energy, which may be converted to electrical energy.

One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.