To provide an electronic component having a protective film formed with good uniformity, over the entire surface thereof. The electronic component has a protective film formed over the entire surface thereof, and the electronic component has elements and wirings formed on a base body. The protective film is formed by a CVD method, over an entire surface of the electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying a raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.

A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

A solar cell apparatus 100 and a method for forming said solar cell apparatus 100, comprising a substrate 101, a n-type transparent conductive oxide (TCO) layer 102 deposited atop said substrate 101, a p-i-n structure 200 that includes a p-type layer 103, an i-type layer 104, a n-type layer 105, a metal back layer 106 deposited atop said n-type layer 105 of the p-i-n structure 200. The n-type layer 105 comprises n-type donors 115 including phosphorus atoms. The n-type donors 115 include oxygen atoms at an atomic concentration comprised between 5% and 25% of the overall atomic composition of the n-type layer 105.

Methods, systems, and devices are disclosed for low noise and high efficiency photoelectric amplification based on cycling excitation process (CEP). In some aspects, a device for amplifying signals of light-induced photocurrent includes an anode connected to a positive terminal of a voltage source; a disordered material layer coupled to the anode, wherein the disordered material layer is structured to have a thickness of 100 nm or less; and a cathode coupled to the disordered material layer and connected to a negative terminal of the voltage source, in which the device is operable to amplify photoexcited carriers based on photon absorption to produce an external quantum efficiency of the device that is at least 100%.

In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.

A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (γ,X) beam irradiation and suitable thermal treatment and is industrially easily available.