An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.

One or more systems and/or methods are disclosed for building a relief print generator with no bezel. An electrode layer having more than one electrode can be used in an electrode-based, electro-luminescence component of the relief print generator. The respective electrodes may be connected to power sources with different voltage phases. An electrical circuit can be created between a biometric object and more than one electrode in the electrode layer when the biometric object contacts a surface of the generator. The electro-luminescent component can be activated by electrical charge and emit light indicative of a relief print of the biometric object. A contact electrode outside the electrode layer may not be used, which may allow for the removal of a bezel from an example device.

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

The application discloses a solar cell component including at least two chip sets connected in series, wherein each chip set includes a plurality of chip units connected in parallel and a bypass diode connected in parallel with the chip units, each chip unit includes one or more photovoltaic chips connected in series, positive poles of the bypass diodes are connected with negative poles of the chip units, and negative poles of the bypass diodes are connected with positive poles of the chip units. The application further provides a solar panel with the solar cell component. The application not only can reduce the number of the bypass diodes, but also can improve economy of the product.

A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.

The invention relates to a switchable absorber element and a photovoltaic cell based thereon. A switchable absorber element according to the invention has an absorber layer. The absorber element furthermore has at least one front side reflection layer and at least one rear side reflection layer, wherein the absorber layer is arranged between front side reflection layer and rear side reflection layer, wherein the optical path length between front side reflection layer and rear side reflection layer is less than 400 nm at least for light impinging perpendicularly onto the cell. The absorber element according to the invention is characterized in that at least one of the reflection layers has a switchable reflectivity.

A solar cell module according to the present disclosure includes a photoelectric converter, a collector electrode electrically connected to the photoelectric converter, and a wiring material (3) electrically connected to the collector electrode, wherein the collector electrode includes: a first electrode film (9A) formed on a photoelectric converter side; and a second electrode film (9B) formed on at least a wiring material side of the first electrode film (9A) so that part of a surface of the first electrode film (9A) on the wiring material side is exposed, and wherein the collector electrode and the wiring material (3) are electrically connected to each other with solder (11) connected to the part of the surface of the first electrode film (9A) exposed from the second electrode film (9B) and to a surface of the second electrode film (9B).