Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.

A solar cell includes a crystalline silicon substrate, a P-doped silicon oxide layer that is formed on a principal surface of the crystalline silicon substrate and that includes phosphorus as an impurity, and an amorphous silicon layer that includes an intrinsic amorphous silicon layer and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer is formed on the P-doped silicon oxide layer. The p-type amorphous silicon layer is formed on the intrinsic amorphous silicon layer and includes a p-type dopant. The intrinsic amorphous silicon layer includes the p-type dopant. The concentration of the p-type dopant in the thickness direction of the intrinsic amorphous silicon layer has a profile higher than the concentration of the p-type dopant at the interface between the P-doped silicon oxide layer and the intrinsic amorphous silicon layer.

n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).

The present disclosure provides methodologies for manufacturing high efficiency silicon photovoltaic devices using hydrogen passivation to improve performance. The processing techniques disclosed use tailored thermal processes, sometimes coupled with exposure to radiation to enable the use of cheaper silicon material to manufacture high efficiency photovoltaic devices.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

The present invention provides a preparation method of amorphous GeH, and belongs to the field of preparation technologies of amorphous GeH. The preparation method provided in the present invention includes the following step: sealing crystalline GeH, a pressure calibration object, and a pressure transmitting medium in a cavity of a diamond anvil cell, and adjusting pressure in the cavity to obtain amorphous GeH. In the present invention, pressure is applied to the GeH in the sealed diamond anvil cell, to implement amorphization of the GeH at room temperature. In this way, impurities can hardly be found in the preparation method, and pure amorphous GeH can be obtained. In addition, the method provided in the present invention has simple operations and good repeatability.

Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.

A roof construction for a vehicle having an opening in its fixed roof, comprises at least one panel for at least closing said opening. The panel comprises a first and a second layer of glass and in between said first and second layer of glass a sheet of photo voltaic cells as a third layer. The sheet of photo voltaic cells has an active layer of a thin film of solar cell material and further has a first area which is semi-transparent and a second area which is substantially opaque.

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

A solar cell includes an n-type silicon substrate having a first main surface and a second main surface, an n-type first semiconductor layer disposed above the first main surface, a first intrinsic semiconductor layer disposed between the first main surface and the first semiconductor layer, a p-type second semiconductor layer disposed on the second main surface, and a second intrinsic semiconductor layer disposed between the second main surface and the second semiconductor layer. An oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer is lower than an oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer. An oxygen concentration at an interface between the second intrinsic semiconductor layer and the second semiconductor layer is higher than an oxygen concentration at an interface between the first intrinsic semiconductor layer and the first semiconductor layer.