The present invention discloses a nanoparticle control and detection system and operating method thereof. The present invention controls and detects the nanoparticles in the same device. The device comprises a first transparent electrode, a photoconductive layer, a spacer which is deposed on the edge of the photoconductive layer and a second transparent electrode. The aforementioned device controls and detects the nanoparticles by applying AC/DC bias and AC/DC light source to the transparent electrode.

This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in an optimal manner. The nanostructured units are grouped and conditioned in an optimal arrangement inside the silicon material. The process comprises the modification of the elementary crystal unit together with the stress field, the electric field and a heavy impurity doping in order to form a superlattice of nanostructured units grouped in an optimal arrangement so as to improve the efficiency of the light-to-electricity conversion by means of efficient use of the kinetic energy of hot electrons and efficient collection of all electrons generated within the converter.

A solar cell is made which has a first conduction-type crystalline silicon substrate having a texture provided on the surface, and an i-type amorphous silicon layer located on the surface of the crystalline silicon substrate, wherein the texture has a larger radius of curvature R1 of root parts thereof than the radius of curvature R2 of peak parts thereof. The crystalline silicon substrate has a first conduction-type highly-doped region containing a first conduction-type dopant on the surface thereof, and the dopant concentration in the first conduction-type highly-doped region is higher than that in the center in the thickness direction of the crystalline silicon substrate.

A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

What is proposed is a method of producing at least two differently heavily doped subzones (3, 5) predominantly doped with a first dopant type in a silicon substrate (1), in particular for a solar cell. The method comprises: covering at least a first subzone (3) of the silicon substrate (1) in which a heavier doping with the first dopant type is to be produced with a doping layer (7) of borosilicate glass, wherein at least a second subzone (5) of the silicon substrate (1) in which a lighter doping with the first dopant type is to be produced is not covered with the doping layer (7), and wherein boron as a dopant of a second dopant type differing from the first dopant type and oppositely polarized with respect to the same is included in the layer (7), and; heating the such prepared silicon substrate (1) to temperatures above 300 C., preferably above 900 C., in a furnace in an atmosphere containing significant quantities of the first dopant type. Additionally, at least a third doped subzone (15) doped with the second dopant type may be produced by the method additionally comprising, prior to the heating, a covering of the doping layer (7), above the third doped subzone (15) to be produced, with a further layer (17) acting as a diffusion barrier for the first dopant type. The method uses the observation that a borosilicate glass layer seems to promote an in-diffusion of phosphorus from a gas atmosphere and may substantially facilitate a manufacturing for example of solar cells, in particular back contact solar cells.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

A solar cell includes a crystalline silicon substrate, a P-doped silicon oxide layer that is formed on a principal surface of the crystalline silicon substrate and that includes phosphorus as an impurity, and an amorphous silicon layer that includes an intrinsic amorphous silicon layer and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer is formed on the P-doped silicon oxide layer. The p-type amorphous silicon layer is formed on the intrinsic amorphous silicon layer and includes a p-type dopant. The intrinsic amorphous silicon layer includes the p-type dopant. The concentration of the p-type dopant in the thickness direction of the intrinsic amorphous silicon layer has a profile higher than the concentration of the p-type dopant at the interface between the P-doped silicon oxide layer and the intrinsic amorphous silicon layer.

A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

The production process according to the invention consists of a nanometric scale transformation of the crystalline silicon in a hybrid arrangement buried within the crystal lattice of a silicon wafer, to improve the efficiency of the conversion of light into electricity, by means of hot electrons. All the parameters, procedures and steps involved in manufacturing giant photoconversion cells have been tested and validated separately, by producing twenty series of test devices.

An example of the technology consists of manufacturing a conventional crystalline silicon photovoltaic cell with a single collection junction and completing the device thus obtained by an amorphizing ion implantation followed by a post-implantation thermal treatment.

The modulation of the crystal, specific to the giant photoconversion, is then carried out on a nanometric scale in a controlled manner to obtain SEGTONs and SEG-MATTER which are active both optically and electronically, together with the primary conversion of the host converter.