A silanized ITO electrode modified with ITO nanoparticles is described. ITO nanoparticles of cubic and semispherical shapes are immobilized on a silanized ITO film. The electrode may be used in an electrolytic cell to detect aqueous sulfide with a 0.5-1.4 M limit of detection. The electrode shows high specificity towards aqueous sulfide and a high reproducibility in measurement.

Embodiments of the invention are directed to a method of producing a photovoltaic apparatus. The method includes the steps of providing a substrate; forming a first conducting electrode layer on the substrate; forming a first charge selective layer at least partially over the first conducting electrode layer; forming a photoactive layer at least partially over the first charge selective layer; forming a second charge selective layer at least partially over the photoactive layer; removing portions the formed layers at predetermined intervals along the substrate creating discrete layer sections partially forming individual photovoltaic modules; and printing a second conducting electrode layer partially over the discrete layer sections and substrate to form a plurality of photovoltaic modules, each photovoltaic module having first and second module terminals, a plurality of inter-module rails, each inter-module rail being located between adjacent photovoltaic modules, a first bus bar extending along one side of the photovoltaic modules, and a second bus bar extending along an opposite side of the photovoltaic modules.

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

A quantum dot infrared detector includes a quantum dot-stacked structure in which quantum dot layers each containing quantum dots stacked on top of one another and intermediate layers. The quantum dots are sandwiched between the intermediate layers in the height direction of the quantum dots. The quantum dots have conduction band quantum confinement levels that include a conduction band ground level, a conduction band first excitation level at a higher energy position than the conduction band ground level, and a conduction band second excitation level at a higher energy position than the conduction band ground level. An energy gap between the conduction band first excitation level and the conduction band bottom of the intermediate layer and an energy gap between the conduction band second excitation level and the conduction band bottom of the intermediate layer are each smaller than twice thermal energy.

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.

A method for the preparation of CIGS-type core-shell nanoparticles produces core-shell nanoparticles that may include a quaternary or ternary metal chalcogenide core. The core may be substantially surrounded by a binary metal chalcogenide shell. A core-shell nanoparticle may be deposited on a PV cell contact (e.g., a molybdenum electrode) via solution-phase deposition. The deposited particles may then be melted or fused into a thin absorber film for use in a photovoltaic device.

A process for producing silicon nano-particles from a raw silicon material, the process including steps of alloying the raw silicon material with at least one alloying metal to form an alloy; thereafter, processing the alloy to form alloy nano-particles; and thereafter, distilling the alloying metal from the alloy nano-particles whereby silicon nano-particles are produced.

A sensor assembly for determining one or more features of a local area is presented herein. The sensor assembly includes a plurality of stacked sensor layers. A first sensor layer of the plurality of stacked sensor layers located on top of the sensor assembly includes an array of pixels. The top sensor layer can be configured to capture one or more images of light reflected from one or more objects in the local area. The sensor assembly further includes one or more sensor layers located beneath the top sensor layer. The one or more sensor layers can be configured to process data related to the captured one or more images. A plurality of sensor assemblies can be integrated into an artificial reality system, e.g., a head-mounted display.

A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.