H01L31/03923

Layer Structure for a Thin-Film Solar Cell and Production Method

A layer structure for a thin-film solar cell and production method are provided. The layer structure for the thin-film solar cell includes a photovoltaic absorber layer doped, at least in a region which borders a surface of the photovoltaic absorber layer, with at least one alkali metal. The layer structure has an oxidic passivating layer on the surface of the photovoltaic absorber layer, which is designed to protect the photovoltaic absorber layer from corrosion.

HIGH EFFICIENCY THIN FILM TANDEM SOLAR CELLS AND OTHER SEMICONDUCTOR DEVICES
20170271622 · 2017-09-21 · ·

Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

Method for manufacturing interconnected solar cells and such interconnected solar cells

Disclosed is a method for making interconnected solar cells, including: a) providing a continuous layer stack on a substrate, including a top electrode layer, a bottom electrode layer adjacent to the substrate, a photovoltaic active layer and a barrier layer adjacent to the bottom electrode layer between the top and bottom electrode layers; b) selectively removing the top electrode layer and the photo-voltaic layer for obtaining a first trench exposing the barrier layer using a first laser beam with a first wavelength; c) selectively removing the barrier layer and the bottom electrode layer within the first trench for obtaining a second trench exposing the substrate using a second laser beam with a second wavelength, d) filling the first trench and the second trench with electrical insulating member. The first wavelength of the first laser beam is larger than a wavelength corresponding with a bandgap energy of the photo-voltaic layer.

PHOTOVOLTAIC TOP MODULE
20230268452 · 2023-08-24 · ·

In accordance with one or more embodiments herein, a method of manufacturing a photovoltaic (PV) top module, to be used together with a PV bottom module, e.g an SI-based PV bottom module, is provided. The method may include monolithically interconnecting a plurality of thin film based PV sub-cells, manufactured using a perovskite material and/or a CIGS material as solar absorbing material, in series on a substrate in order to create a PV top module including at least one first PV top sub-module, and arranging metal grid lines on top and bottom contact layers of the PV top module. The metal grid lines may be arranged either above or below the top and bottom contact layers of the PV top module.

Copper-based chalcogenide photovoltaic device and a method of forming the same

A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.

Display Apparatus and Methods
20220018015 · 2022-01-20 ·

A display includes a plurality of pixel chips, chixels, provided on a substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a seamless look between adjacent display modules. The substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

Sputter deposition apparatus including roller assembly and method

A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10° to 40° around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.

METHOD FOR PLANARIZING CIS-BASED THIN FILM, CIS-BASED THIN FILM MANUFACTURED USING THE SAME, AND SOLAR CELL COMPRISING CIS-BASED THIN FILM

The present invention relates to a method for planarizing a CIS-based thin film, the method including: electropolishing a CIS-based compound layer by applying current or voltage to an electrochemical cell including: a CIS-based compound layer provided on a conductive base material, as a working electrode; a counter electrode; and an electrolyte solution including a precursor of elements constituting the CIS-based compound layer, a supporting electrolyte, a complexing agent, and an additive including a hydroxy functional group.

LIGHTWEIGHT UNITARY DISPLAY

A lightweight display includes a plurality of display modules having a plurality of pixels carried by a display mounting frame. A support frame integral with the display mounting frame provides support. An electronic support member carries electrical components electrically communicating with the plurality of display modules for controlling the display of an image. Wherein the depth of the plurality of display modules, display mounting frame, support frame and electronic support member is less than four inches when defining a display assembly. Also wherein the display assembly has a screen size measured diagonally in a range of 114 inches to 224 inches and a weight in the range of 90 pounds to 120 pounds and wherein the display assembly has an aspect ratio ranging from 1.67 to 1.82.

SOLAR CELL MODULE, PRODUCTION METHOD FOR SAME, AND BUILDING EXTERNAL WALL MATERIAL USING SAME

To provide a solar cell module excellent in processability at the time of production, a method for producing it, and a building exterior wall material using it.

The method for producing a solar cell module of the present invention is a method for producing a solar cell module, which comprises disposing a cover glass, a first encapsulant material containing a first resin, a design material containing a fluororesin, a second encapsulant material containing a second resin and solar cells in this order, and contact-bonding them with heating to produce a solar cell module comprising, from the light-receiving surface side of the solar cell module, the cover glass, a first encapsulant layer having a thickness of from 50 to 2,000 μm, formed of the first encapsulant material, a design layer having a thickness of from 10 to 1,000 μm, formed of the design material, a second encapsulant layer having a thickness of from 50 to 2,000 μm, formed of the second encapsulant material, and the solar cells in this order, wherein a value obtained by subtracting Tm1 from Tmf, and a value obtained by subtracting Tm2 from Tmf, are both 30° C. or higher, where Tmf (° C.) is the melting point of the fluororesin, Tm1 (° C.) is the melting point of the first resin, and Tm2 (° C.) is the melting point of the second resin.