The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

A method for preparing a film of a CIS semiconductor compound overcoated by a color layer includes preparing an electrolyte solution by mixing precursors of film constituents including Cu, In, and Se with a solvent; configuring an electrodeposition circuit by connecting an electrochemical cell comprising the electrolyte solution, a working electrode, and a counter electrode to a voltage or current supply device; disposing a photomask having the predetermined pattern on the working electrode; producing the film through the photomask on a surface of the working electrode by applying a reduction voltage or current; disposing a light source to emit light toward the photomask; and photoelectrically depositing the film on the surface of the working electrode at least in the predetermined pattern while illuminating light through the photomask; and forming a color layer of CuSe at least in the predetermined pattern on the film employed as a working electrode using photo-electrodeposition.

Certain example embodiments relate to electric, potentially-driven shades usable with insulating glass (IG) units, IG units including such shades, and/or associated methods. In such a unit, a dynamic shade is located between the substrates defining the IG unit, and is movable between retracted and extended positions. The dynamic shade includes on-glass layers including a transparent conductor and an insulator or dielectric film, as well as a shutter. The shutter includes a resilient polymer, a conductor, and optional ink. Holes, invisible to the naked eye, may be formed in the polymer. When the conductor is reflective, overcoat layers may be provided to help reduce internal reflection. The polymer may be capable of surviving high-temperature environments and may be colored in some instances. The shade, when extended, may be used as a solar collector in some instances.

A solar cell device with improved performance and a method of fabricating the same is described. The solar cell includes a back contact layer formed on a substrate, an absorber layer formed on the back contact layer, a buffer layer formed on the absorber layer, and a front contact layer formed by depositing a transparent conductive oxide layer on the buffer layer and annealing the deposited TCO layer.

A method of making a coated article includes forming a first coating over a first surface of a substrate; and forming a second coating over a second surface of the substrate. The second coating includes a first conductive layer including tin oxide and at least one material selected from the group consisting of tungsten, molybdenum, and niobium.

A chalcopyrite compound-based thin film in which an alkali metal is incorporated, and a method of fabricating the same are provided. The chalcopyrite compound-based thin film in which an alkali metal is incorporated may have improved film characteristics such as excellent chalcopyrite crystal characteristics and improved surface characteristics, and may exhibit improved optical characteristics by control of the distribution of constituent elements in the chalcopyrite compound layer. Accordingly, performance of a solar cell including the chalcopyrite compound-based thin film may be improved. The chalcopyrite compound-based thin film may be easily fabricated through a solution process.

A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10 to 40 around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.

A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

The invention provides a film having a composition Ag.sub.wCu.sub.1wIn.sub.rGa.sub.xKySe.sub.2(1z)Q.sub.2z; wherein K is Al or Tl or a combination of these; Q is S or Te or a combination of these; w is in a range from 0.01 to 0.75; x is in a range from 0.1 to 0.8; and r, y and z are each independently in a range from 0 to 1, provided that r+x+y=1. Methods of making the film can include processing temperatures not exceeding 500 C.