The invention relates a full-laser scribing method for a flexible stainless steel substrate solar cell module, comprising: preparing an insulating layer and a molybdenum layer on a stainless steel substrate in sequence; using a laser I to scribe the prepared insulating layer and molybdenum layer to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; using a laser II to make scribe and thus form a second scribed line (P2), wherein the second scribed line P2 is parallel with the first scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III to make scribe and thus form a third scribed line (P3), wherein the third scribed line P3 is parallel with the first scribed line P1. The invention may avoid disadvantages caused by the screen printing, such as large dead zone, expensive screen printing paste and frequent replacement of screens for screen printing, thereby improve efficiency and stability of the module and save cost and increase production efficiency.

A solar cell includes a first substrate having a first surface and a second surface. An underlayer is located over the second surface. A first conductive layer is located over the underlayer. An overlayer is located over the first conductive layer. A semiconductor layer is located over the conductive oxide layer. A second conductive layer is located over the semiconductor layer. The first conductive layer includes a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and/or fluorine.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including CuZnSnS(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

In the field of energy technology, a CIGS solar cell and a preparation method thereof, are provided. In some embodiments, the method for preparing the CIGS solar cell comprises: forming a back electrode layer and a CIGS layer sequentially on a surface of a substrate; etching a surface of the CIGS layer, and performing cleaning, drying and annealing treatments after the etching is completed; and forming a buffer layer, a window layer and a transparent electrode layer sequentially on a surface of the annealed CIGS layer after the annealing treatment. The CISG solar cell and the preparation method thereof as provided by some embodiments can improve photoelectric conversion performance of the CIGS solar cell and increase conversion efficiency of the CIGS solar cell.

A display includes a plurality of pixel chips, chixels, provided on a substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a seamless look between adjacent display modules. The substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

Glasses are disclosed having a composition comprising the following oxides (in weight %): SiO.sub.2 61 to 70%, Al.sub.2O.sub.3 0 to 9%, Na.sub.2O 10 to 13%, K.sub.2O 0 to 1%, MgO 2 to 6%, CaO 6 to 16%, SrO 0 to 1%, ZrO.sub.2 0 to 1%, TiO.sub.2 2 to 15%, the glasses having a strain point greater than 570 C. The glasses have good dimensional stability at high temperatures, making them suitable for fire protection glazings and substrates which are processed at elevated temperatures, e.g. substrates for display panels, information storage discs and semiconductor devices, including photovoltaic cells. Physical properties of the glasses, such as thermal expansion coefficient, density and refractive index, are disclosed, as are the melting and liquidus temperatures. The glasses are suitable for manufacture by the float process, yielding flat glass in the form of sheets.

A solar cell includes a first substrate having a first surface and a second surface. An underlayer is located over the second surface. A first conductive layer is located over the underlayer. An overlayer is located over the first conductive layer. A semiconductor layer is located over the conductive oxide layer. A second conductive layer is located over the semiconductor layer. The first conductive layer includes a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and/or fluorine.

A solar cell device with improved performance and a method of fabricating the same is described. The solar cell includes a back contact layer formed on a substrate, an absorber layer formed on the back contact layer, a buffer layer formed on the absorber layer, and a front contact layer formed by depositing a transparent conductive oxide layer on the buffer layer and annealing the deposited TCO layer.

An article, for example a solar cell, includes a first substrate having a first surface and a second surface. An underlayer is located over the second surface. A first conductive layer is located over the underlayer. An overlayer is located over the first conductive layer. A semiconductor layer is located over the conductive oxide layer. A second conductive layer is located over the semiconductor layer. The first conductive layer can include a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and/or fluorine. The overlayer can include a buffer layer having tin oxide and at least one of zinc, indium, gallium, and magnesium.