A display includes a plurality of pixel chips, chixels, provided on a substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a seamless look between adjacent display modules. The substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

Provided is a chalcogenide thin film solar cell having a transparent back electrode, including a transparent substrate, a photoactive layer including an S, Se-based chalcogenide material, and a back electrode disposed between the transparent substrate and the photoactive layer and including a transparent conductive oxide containing titanium (Ti).

Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.

Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.

A method for forming a high purity, copper indium gallium selenide (CIGS) sputtering target is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.

A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

The present invention discloses a method for preparing a compound thin film, a compound thin film prepared therefrom, and a solar cell including the compound thin film. An exemplary embodiment of the present invention provides a method for preparing a compound thin film, the method including: an electrolyte solution preparation step; a circuit configuration step; and a thin film production step in which a compound thin film with a specific pattern provided on the surface thereof is produced according to the difference in the thickness of the thin film between a region where light arrives and a region where light does not arrive.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

In pixels that are two-dimensionally arranged in a matrix fashion in the pixel array unit of a solid-state imaging element, a photoelectric conversion film having a light shielding film buried therein is formed and stacked on the light incident side of the photodiode. The present technique can be applied to a CMOS image sensor compatible with the global shutter system, for example.

The invention relates a full-laser scribing method for a flexible stainless steel substrate solar cell module, comprising: preparing an insulating layer and a molybdenum layer on a stainless steel substrate in sequence; using a laser I to scribe the prepared insulating layer and molybdenum layer to form a first scribed line (P1); preparing the following film layers in sequence on the molybdenum layer in which P1 has been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; using a laser II to make scribe and thus form a second scribed line (P2), wherein the second scribed line P2 is parallel with the first scribed line P1; and preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which P2 has been scribed, and using a laser III to make scribe and thus form a third scribed line (P3), wherein the third scribed line P3 is parallel with the first scribed line P1. The invention may avoid disadvantages caused by the screen printing, such as large dead zone, expensive screen printing paste and frequent replacement of screens for screen printing, thereby improve efficiency and stability of the module and save cost and increase production efficiency.