Patent classifications
H01L31/0682
SOLAR CELL CONTACT FORMATION USING LASER ABLATION
The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.
Photovoltaic device, solar cell string of photovoltaic devices, and solar cell module including either photovoltaic device or solar cell string
A photovoltaic device includes: a p-type diffusion layer (11) and a n-type diffusion layer (12) on a back face of a semiconductor substrate (1); electrodes (4 to 6); and a wiring board (8). The electrodes (4, 6) are disposed on the p-type diffusion layer (11), and the electrodes (5) are disposed on the n-type diffusion layer (12). The wiring board (8) has wires (82) connected to the electrodes (4, 6) by conductive adhesive layers (7) and wires (83) connected to the electrodes (5) by the conductive adhesive layers (7). The electrodes (6) are disposed, on both ends of the n-type diffusion layer (12) with respect to the x-axis direction, between an end region of the n-type diffusion layer (12) and an edge of the semiconductor substrate (1).
Single-step metal bond and contact formation for solar cells
A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.
SOLAR CELL AND PREPARATION METHOD THEREOF
A solar cell and preparation method thereof. The solar cell includes a silicon substrate having first or second polarity, where the substrate includes first and second sides opposite to each other; a first passivation structure on first side of the substrate, where a portion of first structure farthest from the substrate has first polarity and a position where first structure is located is first electrode region; a second passivation structure on a side of first structure away from the substrate and in at least second electrode region, where a portion of second structure farthest from the substrate has second polarity and second structure has a process temperature lower than first structure; and a first electrode in first electrode region on a side of second structure away from the substrate, and a second electrode in second electrode region on a side of second structure away from the substrate.
SOLAR CELL AND PREPARATION METHOD THEREOF
A solar cell and preparation method. The solar cell includes silicon substrate having first or second polarity, where the substrate includes first and second sides opposite to each other; first passivation structure on first side of the substrate, a portion of first structure farthest from the substrate having first polarity and a position where first structure is located being first electrode region; second passivation structure on a side of first structure away from the substrate, a portion of second structure farthest from the substrate having second polarity and a position where second structure is located being second electrode region, second and first electrode regions are not overlapped and second structure has a process temperature lower than first structure; and first electrode in first region on a side of second structure away from the substrate and second electrode in second region on a side of second structure away from the substrate.
Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions
Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.
SOLAR CELL, METHOD FOR PRODUCING SAME AND SOLAR MODULE
A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x>y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/j∈[0.97, 7.58].
BORON DIFFUSION METHOD SUITABLE FOR HETEROJUNCTION BACK CONTACT SOLAR CELLS
A boron diffusion method suitable for HBC solar cells is provided. In a propelling step, a nitrogen and oxygen hybrid propelling mode is used, and a propelling time is increased, such that a junction depth can be effectively increased and a surface concentration can be effectively reduced. Moreover, a nitrogen propelling time is included, such that a concentration of boron in BSG is reduced, and the BSG is easier to be removed completely. For N-type solar cells, the method has excellent front surface doping capability, a thinner dead layer, and good light absorption capability. In addition, the method uses a horizontal diffusion mode and has good single-side performance, and utilizes a gravity press mode to make silicon wafers be placed back-to-back in horizontal grooves.
METHOD FOR SOLDERING SOLAR CELL, CELL STRING, PHOTOVOLTAIC MODULE, AND SOLDERING DEVICE
A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.
Solar cell, method for producing same and solar module
A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO.sub.xN.sub.y) material, where x>y. The second passivation layer includes a first silicon nitride (Si.sub.mN.sub.n) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiO.sub.iN.sub.j) material, where a ratio of i/jϵ[0.97, 7.58].