An IR photodetector includes an electrically conductive layer, a first dielectric layer over the electrically conductive layer, and a phase change material layer over the first dielectric layer. The IR photodetector further includes first and second electrically conductive contacts coupled to the phase change material layer, and a graphene layer over the phase change material layer and having a perforated pattern therein. The IR photodetector includes circuitry configured to apply a bias voltage between the first and second electrically conductive contacts, and detect a sensing current in the phase change material layer caused by IR radiation received by the graphene layer, the IR radiation having a frequency range based upon the bias voltage.

An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.

A photodetection film includes at least one lower photodiode and upper photodiode layered members. The at least one lower photodiode layered member includes lower first-type, intrinsic and second-type semiconductor layers. The at least one upper photodiode layered member is disposed on the at least one lower photodiode layered member and includes upper first-type, intrinsic and second-type semiconductor layers. The upper intrinsic semiconductor layer has an amorphous silicon structure. The lower intrinsic semiconductor layer has a structure selected from one of a microcrystalline silicon structure, a microcrystalline silicon-germanium structure, and a non-crystalline silicon-germanium structure.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

A light pixel projection module includes a pixel light source, a light pixel projection assembly for projecting a light pixel generated by the light pixel generating assembly, and an optical time-of-flight (ToF) measurement assembly for measuring a distance between the projection module and an external object. The ToF measurement assembly includes a ToF light source, a beam splitting optical device for splitting an incident light beam into a reflected main beam component and a transmitted and attenuated secondary beam component, and an APD-based ToF photodetector for light detection. The beam splitting optical device is arranged in the optical path of light beams emitted by the ToF light source such that it splits each light beam emitted by the ToF light source into a main beam component leaving the module and heading towards the external object and a secondary beam component remaining within the module and hitting the ToF photodetector.

A differential amplifier includes an unmatched pair, including first quantum dots and second quantum dots, and a matched pair, including first and second phototransistors. The unmatched pair has a difference between a first spectrum absorbed by the first quantum dots and a second spectrum absorbed by the second quantum dots. Each of the first and second phototransistors includes a channel. The first quantum dots absorb the first spectrum from incident electromagnetic radiation and gate a first current through the channel of the first phototransistor, and the second quantum dots absorb the second spectrum from the incident electromagnetic radiation and gate a second current through the channel of the second phototransistor. The first and second phototransistors are coupled together for generating a differential output from the first and second currents, the differential output corresponding to the difference between the first and second spectrums within the incident electromagnetic radiation.

A photodetecting device is provided. The photodetecting device includes a first photodetecting component including a substrate having a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers, and a second photodetecting component including a second absorption region configured to absorb photons having a second peak wavelength different from the first peak wavelength and to generate second photo-carriers. The first photodetecting component further includes two first readout circuits and two first control circuits for the first photo-carriers and electrically coupled to the first absorption region. The second photodetecting component further includes two second readout circuits and two second control circuits for the second photo-carriers and electrically coupled to the second absorption region, wherein the two second readout circuits are separated from the two first readout circuits, and the two second control circuits are separated from the two first control circuit.

A transceiver separates wavelength-division-multiplexing (WDM) components into two groups, one of which is more sensitive to temperature than the other group. The temperature-sensitive group of optical components is implemented on a first substrate in the transceiver that has a lower thermo-optic coefficient than a second substrate in the transceiver, which contains the group of optical components that is less temperature sensitive. In particular, the first substrate, which may be glass, may include WDM components that convey optical signals having multiple carrier wavelengths. Moreover, the second substrate, such as a silicon substrate (e.g., a silicon-on-insulator platform), may include multiple parallel optical paths with optical components, in which a given optical path conveys an optical signal having a given carrier wavelength.

In order to provide a single-unit sensor which serves as both an illuminance sensor and a proximity sensor, the sensor (1) includes a light receiving element section (E1), an infrared cut-off filter (IRcutF), and a switching section (SWS) for switching spectral characteristics of the light receiving element section (E1). The infrared cut-off filter (IRcutF) has an opening, and an infrared light receiving P-N junction (PDir) is provided at a location deeper in a substrate than a visible light receiving P-N junction (PDvis).

Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.