An optical waveguide type photodetector includes a first semiconductor layer of a first conductive type, a multiplication layer of a first conductive type on the first semiconductor layer, an optical waveguide structure, and a photodiode structure. The photodiode structure has a third semiconductor layer of a second conductive type, an optical absorption layer of an intrinsic conductive type or of a second conductive type, and a second semiconductor layer of a second conductive type. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the photodiode structure located in a second region of the first semiconductor layer and an end face of the optical waveguide structure located in a first region of the first semiconductor layer are in contact.

An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Provided are an imaging device and an electronic apparatus capable of suppressing deterioration in performance due to charge accumulation. An imaging device includes: a photoelectric conversion layer having a first surface and a second surface located on an opposite side to the first surface; a first electrode located on a side of the first surface; and a second electrode located on a side of the second surface. In a thickness direction of the photoelectric conversion layer, when a region overlapping with the first electrode is defined as a first region, and a region deviating from the first electrode is defined as a second region, a first film thickness of the photoelectric conversion layer in at least a part of the first region is thinner than a second film thickness of the photoelectric conversion layer in the second region.

A lateral interband Type II engineered (LITE) detector is provided. LITE detectors use engineered heterostructures to spatially separate electrons and holes into separate layers. The device may have two configurations, a positive intrinsic (PIN) configuration and a BJT (Bipolar junction transistor) configuration. The PIN configuration may have a wide bandgap (WBG) layer that transports the holes above a narrow bandgap (NBG) absorber layer that absorbs the target radiation and transports the electrons. The BJT configuration may have a WBG layer operating as a BJT above an NBG layer. In both configurations, the LITE design uses a Type II staggered offset between the NBG layers and the WBG layers that provides a built-in field for the holes to drift from an absorber region to a transporter region.

Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector includes a photodetector pad coupled to a waveguide core and a light-absorbing layer coupled to the photodetector pad. The light-absorbing layer has a body, a first taper that projects laterally from the body toward the waveguide core, and a second taper that projects laterally from the body toward the waveguide core. The photodetector pad includes a tapered section that is laterally positioned between the first taper and the second taper of the light-absorbing layer.

Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector includes a photodetector pad coupled to a waveguide core and a light-absorbing layer coupled to the photodetector pad. The light-absorbing layer has a body, a first taper that projects laterally from the body toward the waveguide core, and a second taper that projects laterally from the body toward the waveguide core. The photodetector pad includes a tapered section that is laterally positioned between the first taper and the second taper of the light-absorbing layer.

A display device includes a first base layer, a circuit layer disposed on the first base layer and including a plurality of switching elements, a pixel layer disposed on the circuit layer and including a light emitting element, wherein the light emitting element is configured to receive a current from at least one of the plurality of switching elements to emit a first light, and a sensor layer disposed below the first base layer and including a sensor, wherein the sensor is configured to receive a second light generated when the first light is reflected by an external object.

A display device includes a first base layer, a circuit layer disposed on the first base layer and including a plurality of switching elements, a pixel layer disposed on the circuit layer and including a light emitting element, wherein the light emitting element is configured to receive a current from at least one of the plurality of switching elements to emit a first light, and a sensor layer disposed below the first base layer and including a sensor, wherein the sensor is configured to receive a second light generated when the first light is reflected by an external object.