A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×10.sup.16/cm.sup.3. The high-concentration layers have a carrier concentration of 1×10.sup.17/cm.sup.3 or more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.

A voltage tunable solar-blind UV detector using a EG/SiC heterojunction based Schottky emitter bipolar phototransistor with EG grown on p-SiC epi-layer using a chemically accelerated selective etching process of Si using TFS precursor.

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

An optical cavity device has two spaced-apart multiple quantum well (MQW) regions, a central electrode terminal and two marginal electrode terminals. The central electrode terminal contacts a central electrode layer between the MQW regions, and each marginal electrode terminal contacts a separate marginal electrode layer on the other side of each MQW region. There are also two mirrors outside of the MQW regions, forming the cavity. The device has a less-absorptive state and a more-absorptive state selected by varying the voltage between the anode and at least one of the two cathodes. The two marginal electrode terminals may be electrically connected, or the voltage between the central electrode terminal and the marginal electrode terminals may be varied independently. These devices may form an array of detectors, modulators or both. In an array, multiple devices may share a common electrode layer. Devices may be stacked, with two or more anode terminals and two more cathode terminals alternating in the stack. Three or more MQW regions are then formed with either an anode layer or a cathode layer between each MQW region.

An optical cavity device has two spaced-apart multiple quantum well (MQW) regions, a central electrode terminal and two marginal electrode terminals. The central electrode terminal contacts a central electrode layer between the MQW regions, and each marginal electrode terminal contacts a separate marginal electrode layer on the other side of each MQW region. There are also two mirrors outside of the MQW regions, forming the cavity. The device has a less-absorptive state and a more-absorptive state selected by varying the voltage between the anode and at least one of the two cathodes. The two marginal electrode terminals may be electrically connected, or the voltage between the central electrode terminal and the marginal electrode terminals may be varied independently. These devices may form an array of detectors, modulators or both. In an array, multiple devices may share a common electrode layer. Devices may be stacked, with two or more anode terminals and two more cathode terminals alternating in the stack. Three or more MQW regions are then formed with either an anode layer or a cathode layer between each MQW region.

A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

A switching device includes an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate. A stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET.